TITLE

Rapid thermal oxidation of silicon nanowires

AUTHOR(S)
Krylyuk, Sergiy; Davydov, Albert V.; Levin, Igor; Motayed, Abhishek; Vaudin, Mark D.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Oxidation kinetics of silicon nanowires (SiNWs) subjected to rapid thermal oxidation (RTO) at 900 °C and 1000 °C in dry oxygen for exposure times ranging from 1 to 7.5 min is reported. For 1 min, SiNWs exhibit an enhanced oxidation rate compared to planar silicon, but for longer exposures the oxidation rates of SiNWs and planar Si are similar. Compared to furnace oxidation of SiNWs, RTO provides faster average oxidation rates and a weaker dependence of oxide shell thickness on the NW diameter. Our results demonstrate that RTO is an efficient approach for controlled oxidation of SiNWs.
ACCESSION #
36609505

 

Related Articles

  • Investigation of the formation of nanowires from silicon whiskers. Stepanova, A. N.; Muratova, V. I.; Obolenskaya, L. N.; Zhigalina, O. M.; Kiselev, N. A.; Givargizov, E. I. // Crystallography Reports;May2010, Vol. 55 Issue 3, p500 

    Nanowires have been prepared by the high-temperature oxidation of Si whiskers. The dependences of the nanowire formation on the oxidation parameters have been investigated. The oxidation rate is shown to depend on the whisker diameter. Oxidation in dry oxygen at temperatures no higher than...

  • Size-dependent oxidation behavior for the anomalous initial thermal oxidation process of Si. Cui, H.; Sun, Y.; Yang, G. Z.; Yang, G. W.; Wang, C. X. // Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p083108 

    To have a clear insight into the physical origin of the anomalous initial oxidation behavior for silicon oxidation, we proposed a kinetics model by introducing the nanosize effect into the oxidation process. The rate equation of oxide growth was calculated based on our model, and these results...

  • Condensation of silicon nanowires from silicon monoxide by thermal evaporation — An X-ray absorption spectroscopy investigation. Kim, P.-S. G.; Tang, Y.-H.; Sham, T.-K.; Lee, S. T. // Canadian Journal of Chemistry;Oct2007, Vol. 85 Issue 10, p695 

    We report a Si K-edge X-ray absorption fine structures (XAFS) study of silicon monoxide (SiO), the starting material for silicon nanowire preparation, its silicon nanowires, and the residue after the preparation of the starting material. The silicon nanowires were condensed onto three different...

  • Cu/SiO[sub 2-x] nanowires with compositional modulation structure grown via thermal evaporation. Wang, Y. G.; Jin, A. Z.; Zhang, Z. // Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4425 

    One-dimensional compositional modulation has been achieved in Cu/SiO[sub 2-x] nanowires prepared at the substrate temperature of 1000°C by thermal evaporation of a cuprous oxide and silicon mono-oxide mixture. The synthesized nanowires consist of the Cu spheres uniformly piled up along the...

  • Oxide-assisted growth and characterization of Ge/SiO[sub x] nanocables. Meng, Xiang-Min; Hu, Jun-Qing; Jiang, Yang; Lee, Chun-Sing; Lee, Shuit-Tong // Applied Physics Letters;9/15/2003, Vol. 83 Issue 11, p2241 

    Germanium/SiO[sub x] nanocables were prepared via simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5%H[sub 2] as the carrier gases. The product was characterized by scanning electron microscopy, transmission electron microscopy (TEM) with energy...

  • Micrometer-sized Si-Sn-O novel structures with SiONWs on their surfaces. Sun, S.H.; Meng, G.W.; Gao, T.; Zhang, M.G.; Tian, Y.T.; Peng, X.S.; Jin, Y.X.; Zhang, L.D. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 6, p999 

    Novel micrometer-sized Si-Sn-O structures with SiO[SUB2] nanowires (SiONWs) growing from their surfaces have been achieved at about 980°C on Si (111) wafer catalyzed by Sn vapor generated from Sn powders. The Si wafer itself served as a silicon source in the reaction. The micrometer-sized...

  • Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation. Farjas, J.; Rath, Chandana; Pinyol, A.; Roura, P.; Bertran, E. // Applied Physics Letters;11/7/2005, Vol. 87 Issue 19, p192114 

    A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial...

  • Continuous-flow Mass Production of Silicon Nanowires via Substrate-Enhanced Metal-Catalyzed Electroless Etching of Silicon with Dissolved Oxygen as an Oxidant. Ya Hu; Kui-Qing Peng; Lin Liu; Zhen Qiao; Xing Huang; Xiao-Ling Wu; Xiang-Min Meng; Shuit-Tong Lee // Scientific Reports;1/17/2014, p1 

    Silicon nanowires (SiNWs) are attracting growing interest due to their unique properties and promising applications in photovoltaic devices, thermoelectric devices, lithium-ion batteries, and biotechnology. Low-cost mass production of SiNWs is essential for SiNWs-based nanotechnology...

  • Fabrication of Coaxial SiGe Heterostructure Nanowires by O Flow-Induced Bifurcate Reactions. Kim, Ilsoo; Lee, Ki-Young; Kim, Ungkil; Park, Yong-Hee; Park, Tae-Eon; Choi, Heon-Jin // Nanoscale Research Letters;Oct2010, Vol. 5 Issue 10, p1535 

    We report on bifurcate reactions on the surface of well-aligned SiGe nanowires that enable fabrication of two different coaxial heterostructure nanowires. The SiGe nanowires were grown in a chemical vapor transport process using SiCl gas and Ge powder as a source. After the growth of nanowires,...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics