TITLE

Improved silicon surface passivation achieved by negatively charged silicon nitride films

AUTHOR(S)
Weber, K. J.; Jin, H.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A corona discharge is used to create and store negative charge in the silicon nitride films of silicon dioxide/silicon nitride stacks. Effective lifetime measurements on both textured and planar, as well as both boron diffused and undiffused silicon samples passivated with silicon oxide/silicon nitride stacks, show that the creation of negative charge in the nitride layer results in an improvement in the surface passivation for all samples, with very low (<2 cm/s) effective surface recombination velocities demonstrated for planar, undiffused samples. The manipulation of charge can be exploited to improve the conversion efficiency of silicon solar cells.
ACCESSION #
36609501

 

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