TITLE

Lower-temperature crystallization of CoFeB in MgO magnetic tunnel junctions by using Ti capping layer

AUTHOR(S)
Ibusuki, Takahiro; Miyajima, Toyoo; Umehara, Shinjiro; Eguchi, Shin; Sato, Masashige
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effects of capping materials on magnetoresistance (MR) properties of MgO magnetic tunnel junctions (MTJs) with a CoFeB free layer were investigated. MR ratios of samples with various capping materials showed a difference in annealing temperature dependence. MTJ with a Ti capping layer annealed at 270 °C showed a MR ratio 1.4 times greater than that with a conventional Ta or Ru capping layer. Secondary ion mass spectroscopy and high-resolution transmission electron microscopy images revealed that crystallization of CoFeB was remarkably affected by adjacent materials and the Ti capping layer adjoining CoFeB acted as a boron-absorption layer. These results suggest that the crystallization process can be controlled by choosing proper capping materials. Ti is one of the effective materials that accelerate the crystallization of CoFeB layers at lower annealing temperature.
ACCESSION #
36609497

 

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