The substrate thickness dependence of the photovoltage in LaAlO3-δ/Si heterostructures

Juan Wen; Kui-juan Jin; Meng He; Huibin Lu; Fang Yang; Guozhen Yang
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
The photoelectric properties of LaAlO3-δ/Si heterostructures with different substrate thicknesses were systematically investigated, in which the LaAlO3-δ thin films were epitaxially grown on p-type Si substrates by a computer-controlled laser molecular-beam epitaxy system. Picosecond photoelectric response was observed, and the photoelectric sensitivity was improved greatly by decreasing the thickness of the Si substrates. The maximum photoelectric sensitivity reached 85.6 V/W, and faster photoelectric response was obtained with thinner Si substrate. The experimental results demonstrate that the photoelectrical effects on heterostructures consisting of perovskite oxide and thin silicon substrate are not only with fast response but also with high sensitivity.


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