Electronic structure and carrier dynamics in InAs/InP double-cap quantum dots

Miska, P.; Even, J.; Marie, X.; Dehaese, O.
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
The carrier dynamics in InAs double-cap quantum dots (DC-QDs) grown on InP(113)B are investigated. The shape of these QDs can be controlled during the growth, yielding an emission wavelength of the system of about 1.55 μm at room temperature. The DC-QD dynamics is studied by time-resolved photoluminescence experiments at low temperature for various excitation densities. A simplified dynamic model is developed, yielding results consistent with experimental data. This analysis yields the determination of the Auger coefficients and the intradot relaxation time in this system.


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