Superlinear photovoltaic effect in Si nanocrystals based metal-insulator-semiconductor devices

Prezioso, S.; Hossain, S. M.; Anopchenko, A.; Pavesi, L.; Wang, M.; Pucker, G.; Bellutti, P.
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
Superlinear-variation in short circuit photocurrent with increasing incident optical power has been observed in metal-insulator-semiconductor structures having a silicon rich oxinitride active layer containing silicon nanocrystals. A model has been elaborated where an internal gain mechanism explains the superlinear photovoltaic effect. The internal gain mechanism is due to secondary carrier generation (SCG) from sub-bandgap levels in the nanocrystal. SCG is caused by impact excitation from the photogenerated conduction band electrons. The sub-bandgap levels are associated to traps formed at the dielectric/Si-nanocrystals interface.


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