Realization of dual-gated Ge–SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain

Junghyo Nah; Liu, E.-S.; Shahrjerdi, D.; Varahramyan, K. M.; Banerjee, S. K.; Tutuc, E.
February 2009
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
Academic Journal
We demonstrate dual-gated germanium (Ge)-silicon germanium (SixGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high-κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S and D regions of NW were then doped using low energy (3 keV) boron (B) ion implantation with a dose of 1015 cm-2. The electrical characteristics of these devices exhibit up to two orders of magnitude higher current and an improved ON/OFF current ratio by comparison to dual-gated NW FET with undoped S/D.


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