TITLE

Energy level alignment at a charge generation interface between 4,4′-bis(N-phenyl-1-naphthylamino)biphenyl and 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile

AUTHOR(S)
Yong-Ki Kim; Jeong Won Kim; Yongsup Park
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have determined the electronic energy level alignment at the interface between 4,4′-bis(N-phenyl-1-naphthylamino)biphenyl (NPB) and 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) using ultraviolet photoelectron spectroscopy. The highest occupied molecular orbital (HOMO) of 20 nm thick HAT-CN film was located at 3.8 eV below the Fermi level. Thus the lowest unoccupied molecular orbital (LUMO) is very close to the Fermi level. The HOMO position of NPB was only about 0.3 eV below Fermi level at NPB/HAT-CN interface. This enables an easy excitation of electrons from the NPB HOMO to the HAT-CN LUMO, creating electron-hole pairs across this organic-organic interface.
ACCESSION #
36609484

 

Related Articles

  • An accurate determination of barrier heights at the HfO2/Si interfaces. Puthenkovilakam, Ragesh; Chang, Jane P. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2701 

    X-ray photoelectron spectroscopy (XPS) combined with first principles simulations are used to investigate the band alignments of HfO2 on silicon. Our theoretical calculations predict dangling bond states originating from the partial occupancy of Hf d orbitals at a stoichiometric HfO2/Si...

  • Chemical structure study of SiO2/4H-SiC (0001) interface transition region by angle-dependent x-ray photoelectron spectroscopy. Qiaozhi Zhu; Lingqin Huang; Wenbo Li; Shenmin Li; Dejun Wang // Applied Physics Letters;8/22/2011, Vol. 99 Issue 8, p082102 

    The chemical structure of SiO2/4H-SiC (0001) interface transition region is investigated using angle-dependent x-ray photoelectron spectroscopy. The relative intensities of various silicon oxycarbides (SiOxCy) components as a function of polar emission angle suggest that SiOC3, SiO2C2, SiO3C,...

  • The effect of magnesium added at C60/Rubrene heterointerfaces. Cheng, Chiu-Ping; Lee, Cheng-Wei; Chu, Yu-Ya; Wei, Ching-Hsuan; Pi, Tun-Wen // Journal of Applied Physics;Dec2013, Vol. 114 Issue 24, p243704 

    This study examines the effect of adding magnesium (Mg) at C60/rubrene heterointerfaces by using synchrotron-radiation photoemission spectroscopy. The heterointerface was obtained by depositing C60 on a 4-Ã… Mg/rubrene surface. The photoemission spectra showed that the added Mg preferentially...

  • The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface. Park, Sang Han; Kim, Hyo Jin; Cho, Mann-Ho; Yi, Yeonjin; Cho, Sang Wan; Yang, Jaehyun; Kim, Hyoungsub // Applied Physics Letters;2/21/2011, Vol. 98 Issue 8, p082111 

    The interfacial electronic structures of zinc oxide (ZnO)/copper-phthalocyanine (CuPc) were investigated by in situ x-ray and ultraviolet photoelectron spectroscopy (UPS) to determine the effects of air contamination on the ZnO substrate. UPS spectra showed that the 0.2 eV of the interface...

  • A density functional theory study of the manganese-phthalocyanine. Stradi, Daniele; Díaz, Cristina; Martín, Fernando; Alcamí, Manuel // Theoretical Chemistry Accounts: Theory, Computation, & Modeling;Apr2011, Vol. 128 Issue 4-6, p497 

    We present a systematic density functional theory (DFT) study of the isolated manganese-phthalocyanine, MnPc, by using both localized gaussian-type orbital (GTO) and plane-wave (PW) basis sets and the following exchange-correlation functionals: B3LYP, PBE, PBE0, HSE, and HSE06. We find a very...

  • Interface formation between tris(8-hydroxyquinoline) aluminum and ZnO nanowires and film. Lee, Jung Han; Shin, Jeong Ho; Song, Jae Yong; Yi, Yeonjin // Applied Physics Letters;12/27/2010, Vol. 97 Issue 26, p263302 

    The energy level alignments at the interface between tris(8-hydroxyquinoline) aluminum (Alq3) and ZnO nanowires and thin film were studied with in situ x-ray and ultraviolet photoemission spectroscopy. The changes of work functions, highest occupied molecular orbitals, and core levels were...

  • In situ preparation and interface characterization of TiO[sub 2]/Cu[sub 2]S heterointerface. Liu, Guangming; Schulmeyer, T.; Thissen, A.; Klein, A.; Jaegermann, W. // Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2269 

    The electronic structures and interface properties of the TiO[sub 2]/Cu[sub 2]S interface have been in situ studied after each growth step by x-ray and ultraviolet photoelectron spectroscopy. The p-doped Cu[sub 2]S films (BE[sub VBM]=0.1 eV) were grown on the highly n-doped chemical vapor...

  • Dependence of (0001) GaN/AIN valence band discontinuity on growth temperature and surface... King, S.W.; Ronning, C.; Davis, R.F.; Benjamin, M.C.; Nemanich, R.J. // Journal of Applied Physics;8/15/1998, Vol. 84 Issue 4, p2086 

    Focuses on a study conducted to determine the heterojunction valence band discontinuity at the (0001) GaN/AIN interface using x ray and ultraviolet photoelectron spectroscopies. Information on the compound semiconductors GaN and AIN; Description of the methodology used in the study; Results of...

  • Electronic states at conducting polymer/conducting oxide interfaces observed using a low-energy... Nakanishi, Naoki; Tada, Kazuya // Applied Physics Letters;7/12/1999, Vol. 75 Issue 2, p226 

    Observes the electronic states at conducting polymer/conducting oxide interfaces using a low-energy photoelectron spectroscopic method. Occurrence at the interfaces of the electron transfer from a conducting polymer to indium tin oxide.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics