TITLE

Room-temperature operation of a 2.25 μm electrically pumped laser fabricated on a silicon substrate

AUTHOR(S)
Rodriguez, J. B.; Cerutti, L.; Grech, P.; Tournié, E.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a GaSb-based type-I laser structure grown by molecular beam epitaxy on a (001) silicon substrate. A thin AlSb nucleation layer followed by a 1 μm thick GaSb buffer layer was used to accommodate the very large lattice mismatch existing with the silicon substrate. Processed devices with mesa geometry exhibited laser operation in pulsed mode with a duty cycle up to 10% at room temperature.
ACCESSION #
36609472

 

Related Articles

  • Optically pumped laser oscillation in the 1.6–1.8 μm region from Al0.4Ga0.6Sb/GaSb/Al0.4Ga0.6Sb double heterostructures grown by molecular beam heteroepitaxy on Si. van der Ziel, J. P.; Malik, R. J.; Walker, J. F.; Mikulyak, R. M. // Applied Physics Letters;2/17/1986, Vol. 48 Issue 7, p454 

    Double heterostructures consisting of GaSb active layers with Al0.4Ga0.6Sb cladding layers were grown by molecular beam heteroepitaxy on Si substrates. The intrinsic ∼12% lattice mismatch between the GaSb and the Si at the growth temperature is largely taken up by a GaSb/AlSb superlattice....

  • Initial stages of epitaxial growth of GaAs on (100) silicon. Biegelsen, D. K.; Ponce, F. A.; Smith, A. J.; Tramontana, J. C. // Journal of Applied Physics;3/1/1987, Vol. 61 Issue 5, p1856 

    Presents information on a study which discussed direct observations of early stages of molecular-beam epitaxial growth of gallium arsenide (GaAs) on oriented and vicinal silicon (Si) surfaces. Growth of the GaAs/Si system; Measurement of the average spacing between island peaks; Behavior...

  • GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy. Mitsunaga, K.; Noda, S.; Kojima, K.; Kameya, M.; Kyuma, K.; Hamanaka, K.; Nakayama, T. // Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1622 

    GaAs/AlGaAs transverse junction stripe lasers with a distributed feedback structure were fabricated. The cw threshold current was 27 mA at 20 °C. The laser operated in a pure single longitudinal mode at the wavelength of 867 nm.

  • Manipulation of nucleation by growth rate modulation. Larsson, Mats I.; Ni, Wei-Xin; Hansson, Göran V. // Journal of Applied Physics;9/15/1995, Vol. 78 Issue 6, p3792 

    Reports a study that manipulated nucleation by means of periodic modulation of the growth rate, both during molecular beam epitaxial growth of silicon on silicon and using a simulated bilayer structure. Method of the study; Results and discussion; Conclusion.

  • Limiting conditions of Si selective epitaxial growth in Si[sub 2]H[sub 6] gas-source molecular.... Aketagawa, K.; Tatsumi, T.; Sakai, J. // Applied Physics Letters;9/30/1991, Vol. 59 Issue 14, p1735 

    Examines the limiting conditions of silicon selective epitaxial growth in Si[sub 2]H[sub 6] gas-source molecular beam epitaxy. Range of temperature used in the study; Nucleation of polycrystalline silicon on silica surface; Correlation between supply gas volume and silicon nucleation.

  • Long wavelength GaSb photoconductive detectors grown on Si substrates. Levine, B. F.; Malik, R. J.; Bethea, C. G.; Walker, J. // Applied Physics Letters;4/21/1986, Vol. 48 Issue 16, p1083 

    We report the first long wavelength photoconductive detectors fabricated from GaSb epitaxially grown on Si substrates. Responsivities of 0.18 A/W are obtained at a wavelength of 1.5 μm.

  • Silicon incorporation in GaAs: From delta-doping to monolayer insertion. Wagner, J.; Newman, R. C.; Roberts, C. // Journal of Applied Physics;8/15/1995, Vol. 78 Issue 4, p2431 

    Presents information on a study that used Raman spectroscopy to examine the incorporation of silicon into doping layers in gallium-arsenic grown by molecular beam epitaxy. Importance of local vibrational modes spectroscopy in semiconductors; Use of molecular beam epitaxy.

  • Lateral coherence properties of broad-area semiconductor quantum well lasers. Larsson, A.; Salzman, J.; Mittelstein, M.; Yariv, A. // Journal of Applied Physics;7/1/1986, Vol. 60 Issue 1, p66 

    Investigates the lateral coherence of broad-area lasers fabricated from a gallium-arsenic/gallium-aluminum-arsenic graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy. Measurement of the spatial coherence between different points...

  • Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs. Li, L. H.; Sallet, V.; Patriarche, G.; Largeau, L.; Bouchoule, S.; Travers, L.; Harmand, J. C. // Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1298 

    GaInNAsSb quantum wells grown by molecular-beam epitaxy on GaAs substrates were investigated. Intricate incorporation mechanisms of the constituents in this quinary alloy were seen. In highly strained indium-rich alloys, antimony incorporation is strongly reduced, and a beneficial surfactant...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics