Calculation of electric-field strength profiles in GaAs:Cr epitaxial-diffusion structures

Germogenov, V. P.; Ponomarev, I. V.
September 2008
Russian Physics Journal;Sep2008, Vol. 51 Issue 9, p994
Academic Journal
The electric-field strength profiles are calculated for the structures used in X-ray detectors produced by diffusion of the deep acceptor Cr impurity into an n-GaAs epitaxial layer. The effects of diffusion temperature, external bias, and the ratio of electron and hole emission coefficients on the distribution of electric-field strength in the structure are examined.


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