Compensation and carrier trapping in indium-doped CdTe: Contributions from an important near-mid-gap donor

Babentsov, V.; Franc, J.; James, R. B.
February 2009
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
Academic Journal
We report on the recharging of the neutral state of a deep-donor layer that increases the efficiency of charge collection in detector-grade CdTe:In. Measurements with photoinduced current transient spectroscopy and thermoelectric effect spectroscopy revealed positively charged energy level at EC-0.65 eV. Photoluminescence measurements identified this level being responsible for the 0.68 eV emission band. Its positive charge is converted into a neutral one by the upward displacement of Fermi level. We discuss the nature of this deep defect based on the latest ab initio calculations.


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