Metallic conductivity and the role of copper in ZnO/Cu/ZnO thin films for flexible electronics

Sivaramakrishnan, K.; Alford, T. L.
February 2009
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
Academic Journal
ZnO/Cu/ZnO multilayer structures are obtained with the highest conductivity of dielectric-metal-dielectric films reported in literature with a carrier concentration of 1.2×1022 cm-3 and resistivity of 6.9×10-5 Ω-cm at the optimum copper layer thickness. The peak transmittance, photopic averaged transmittance, and Haacke figure of merit are 88%, 75%, and 8.7×10-3 Ω-1, respectively. The conduction mechanism involves metal to oxide carrier injection prior to the formation of a continuous metal conduction pathway. Optical transmission is elucidated in terms of copper’s absorption due to d-band to Fermi surface transitions at short wavelengths and reflectance combined with scattering losses at long wavelengths.


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