Direct printing of aligned carbon nanotube patterns for high-performance thin film devices

Jiwoon Im; Il-Ha Lee; Byung Yang Lee; Byeongju Kim; June Park; Woojong Yu; Un Jeong Kim; Young Hee Lee; Maeng-Je Seong; Eun Hong Lee; Yo-Sep Min; Seunghun Hong
February 2009
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
Academic Journal
The aligned assembly of carbon nanotubes (CNTs) on substrate presents a significant bottleneck in the fabrication of high-performance thin film devices. Here, we report a direct printing method to prepare laterally aligned thick CNT patterns over large surface regions. In this method, CNT forests were grown selectively on specific regions of one substrate, and the forest patterns were transferred on another SiO2 substrate in a laterally aligned formation while keeping their original shapes. The degree of alignment was characterized via electrical measurement and polarized Raman spectroscopy. Furthermore, we demonstrated high-performance field-effect transistors and gas sensors using our method.


Related Articles

  • Deformable transparent all-carbon-nanotube transistors. Aikawa, Shinya; Einarsson, Erik; Thurakitseree, Theerapol; Chiashi, Shohei; Nishikawa, Eiichi; Maruyama, Shigeo // Applied Physics Letters;2/6/2012, Vol. 100 Issue 6, p063502 

    We fabricated polymer-laminated, transparent, all-carbon-nanotube field-effect transistors (CNT-FETs), making use of the flexible yet robust nature of single-walled carbon nanotubes (SWNTs). All components of the FET (active channel, electrodes, dielectric layer, and substrate) consist of...

  • Effect of ferroelectric substrate on carrier mobility in graphene field-effect transistors. Bidmeshkipour, S.; Vorobiev, A.; Andersson, M. A.; Kompany, A.; Stake, J. // Applied Physics Letters;2015, Vol. 107 Issue 17, p1 

    Effect of LiNbO3 ferroelectric substrate on the carrier mobility in top gated graphene field-effect transistors (G-FETs) is demonstrated. It is shown that, at the same residual concentration of the charge carriers, the mobility in the G-FETs on the LiNbO3 substrate is higher than that on the...

  • Top-down approach to align single-walled carbon nanotubes on silicon substrate. Orofeo, Carlo M.; Ago, Hiroki; Yoshihara, Naoki; Tsuji, Masaharu // Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG 

    We report controlled horizontal alignment of single-walled carbon nanotubes (SWNTs) directly grown on trenched SiO2/Si substrate. The nanotubes were found to align along the trenches, which were created via electron beam lithography followed by reactive ion etching. From the experimental...

  • Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes. Feng, Y.; Lee, K.; Farhat, H.; Kong, J. // Journal of Applied Physics;Nov2009, Vol. 106 Issue 10, p104505-1 

    This work examines the enhancement of current on/off ratio in field effect transistor devices with bundled single-walled carbon nanotubes (CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the...

  • Analysis of hopping conduction in semiconducting and metallic carbon nanotube devices. Perello, David J.; Yu, Woo Jong; Bae, Dong Jae; Chae, Seung Jin; Kim, M. J.; Lee, Young Hee; Yun, Minhee // Journal of Applied Physics;Jun2009, Vol. 105 Issue 12, p124309 

    Single-walled carbon nanotube field-effect transistors were irradiated with 20 keV electrons using an e-beam lithography exposure method. Analysis of conduction data in the temperature range from 25 to 300 K indicated the creation of insulating regions containing traps along the nanotube...

  • Fabrication of high performance top-gate complementary inverter using a single carbon nanotube and via a simple process. Hu, Y. F.; Yao, K.; Wang, S.; Zhang, Z. Y.; Liang, X. L.; Chen, Q.; Peng, L.-M.; Yao, Y. G.; Zhang, J.; Zhou, W. W.; Li, Y. // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p223116 

    High performance complementary inverters have been fabricated using single-walled carbon nanotubes. The Al2O3 top-gate dielectric is grown via first depositing an Al film followed by complete oxidation of the film. It is shown that the quality of the Al2O3 film can be significantly improved by...

  • Solution-processed trilayer inorganic dielectric for high performance flexible organic field effect transistors. Tan, H. S.; Kulkarni, S. R.; Cahyadi, T.; Lee, P. S.; Mhaisalkar, S. G.; Kasim, J.; Shen, Z. X.; Zhu, F. R. // Applied Physics Letters;11/3/2008, Vol. 93 Issue 18, p183503 

    High performance organic field effect transistors using a solution-processable processed trilayer sol-gel silica gate dielectric architecture fabricated on plastic substrates exhibited low driving voltages of -3.0 V, high saturation mobilities of ∼3.5 cm2/V s, and on-off current ratio of...

  • Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy. Beechem, Thomas; Christensen, Adam; Green, D. S.; Graham, Samuel // Journal of Applied Physics;Dec2009, Vol. 106 Issue 11, p114509-1 

    The capability of gallium nitride (GaN) high power transistors arises, in large part, due to piezoelectric polarizations that induce the formation of a carrier rich two-dimensional electron gas. These polarizations, in turn, are directly related to the strain and hence stress that is present...

  • Graphene based field effect transistor for the detection of ammonia. Gautam, Madhav; Jayatissa, Ahalapitiya H. // Journal of Applied Physics;Sep2012, Vol. 112 Issue 6, p064304 

    Graphene synthesized by chemical vapor deposition has been used to fabricate the back-gated field effect transistor to study the sensing of ammonia (NH3) in ppm levels. Graphene has been synthesized directly on a target substrate using a thin Cu film as a catalyst, which has several advantages...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics