TITLE

Atomic layer deposition of LaxZr1-xO2-δ (x=0.25) high-k dielectrics for advanced gate stacks

AUTHOR(S)
Tsoutsou, D.; Lamagna, L.; Volkos, S. N.; Molle, A.; Baldovino, S.; Schamm, S.; Coulon, P. E.; Fanciulli, M.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin LaxZr1-xO2-δ (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 °C using (iPrCp)3La, (MeCp)2ZrMe(OMe) and O3 species. Their properties are studied by grazing incidence x-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and electrical measurements on the as-grown films and after vacuum annealing at 600 °C. Annealed films feature resistance to hygroscopicity, a large k value of around 30 and an acceptable leakage current density. A low-k silica-rich interlayer is also evidenced at both pristine and annealed high-k/Si interfaces.
ACCESSION #
36534189

 

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