Atomic layer deposition of LaxZr1-xO2-δ (x=0.25) high-k dielectrics for advanced gate stacks

Tsoutsou, D.; Lamagna, L.; Volkos, S. N.; Molle, A.; Baldovino, S.; Schamm, S.; Coulon, P. E.; Fanciulli, M.
February 2009
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
Academic Journal
Thin LaxZr1-xO2-δ (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 °C using (iPrCp)3La, (MeCp)2ZrMe(OMe) and O3 species. Their properties are studied by grazing incidence x-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and electrical measurements on the as-grown films and after vacuum annealing at 600 °C. Annealed films feature resistance to hygroscopicity, a large k value of around 30 and an acceptable leakage current density. A low-k silica-rich interlayer is also evidenced at both pristine and annealed high-k/Si interfaces.


Related Articles

  • Band alignment of atomic layer deposited (ZrO2)x(SiO2)1-x gate dielectrics on Si (100). Tahir, Dahlang; Eun Kyoung Lee; Suhk Kun Oh; Tran Thi Tham; Hee Jae Kang; Hua Jin; Sung Heo; Ju Chul Park; Jae Gwan Chung; Jae Cheol Lee // Applied Physics Letters;5/25/2009, Vol. 94 Issue 21, p212902 

    The band alignment for atomic layer deposited (ZrO2)x(SiO2)1-x (x=1.0, 0.75, 0.5, 0.25) gate dielectric thin films grown on Si (100) was obtained by using x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, conduction band offset, and the valence band...

  • X-ray photoelectron diffraction study of ultrathin PbTiO3 films. Despont, L.; Lichtensteiger, C.; Clerc, F.; Garnier, M. G.; De Abajo, Garcia F. J.; Van Hove, M. A.; Triscone, J.-M.; Aebi, P. // European Physical Journal B -- Condensed Matter;Jan2006, Vol. 49 Issue 2, p141 

    Full hemispherical X-ray photoelectron diffraction (XPD) experiments have been performed to investigate at the atomic level ultrathin epitaxial c-axis oriented PbTiO3 (PTO) films grown on Nb-doped SrTiO3 substrates. Comparison between experiment and theory allows us to identify a preferential...

  • Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition. Lopes, J. M. J.; Littmark, U.; Roeckerath, M.; Lenk, St.; Schubert, J.; Mantl, S.; Besmehn, A. // Journal of Applied Physics;5/15/2007, Vol. 101 Issue 10, p104109 

    Amorphous LaScO3 thin films were grown on (100) Si by molecular beam deposition and the effects of postdeposition thermal treatments on the film properties were studied after anneals in O2 or inert Ar atmosphere at 400 or 650 °C. Rutherford backscattering spectrometry, transmission electron...

  • Influence of Au nanoparticles on the photoluminescent and electrical properties of Bi3.6Eu0.4Ti3O12 ferroelectric thin films. Li Su; Ni Qin; Wei Xie; Jianhui Fu; Dinghua Bao // Journal of Applied Physics;2014, Vol. 116 Issue 3, p034101-1 

    Au-doped Bi3.6Eu0.4Ti3O12 (BET) thin films were prepared on fused silica and Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. The existence of Au nanoparticles (NPs) has been confirmed by X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscope...

  • Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics. Lee, K. Y.; Lee, W. C.; Lee, Y. J.; Huang, M. L.; Chang, C. H.; Wu, T. B.; Hong, M.; Kwo, J. // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p222906 

    Molecular beam epitaxy (MBE) grown high κ dielectrics of Al2O3 and HfO2 are employed as templates to suppress effectively the oxide/Si interfacial layer formation during the subsequent atomic layer deposition (ALD) growth. The absence of the interfacial layer was confirmed using x-ray...

  • Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition. Ngo, Thong Q.; Posadas, Agham B.; McDaniel, Martin D.; Chengqing Hu; Bruley, John; Yu, Edward T.; Demkov, Alexander A.; Ekerdt, John G. // Applied Physics Letters;2/24/2014, Vol. 104 Issue 8, p1 

    Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO3 (BTO) on Si(001) using a thin (1.6nm) buffer layer of SrTiO3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225 °C used barium bis(triisopropylcyclopentadienyl), titanium...

  • Galvanomagnetic transport properties of nitrogenated (La,Sr)MnO3-δ and LaMnO3-δ. von Kreutzbruck, M.; Lembke, G.; Korte, C.; Franz, B. // Applied Physics A: Materials Science & Processing;Jul2007, Vol. 88 Issue 1, p201 

    Epitaxial thin films of nitrogenated La0.65Sr0.30MnO3 were grown on MgO(100) substrates by pulsed laser deposition (PLD). The nitrogenation was achieved by a continuous nitrogen flow in the PLD chamber with pressures of up to 0.12 mbar. The chemical analysis of the samples regarding the exchange...

  • PHYSICOCHEMICAL FEATURES OF DIELECTRICAL NANO-BARRIER LAYERS IN CdSexS1,x FILMS FORMED BY SCREEN PRINTING METHOD. Trofimov, Yu. V.; Survilo, L. N.; Ostretsov, E. F.; Tivanov, M. S. // Lithuanian Journal of Physics;2012, Vol. 52 Issue 3, p219 

    The thermal activation process of CdSexS1-x films, formed by screen printing, was investigated. We mostly focused on the influence of thermal treatment conditions on oxidised film formation on the crystalline grain surface with nano-barrier “dielectric-semiconductor” layer...

  • Crystallization and grain growth behavior of CoFeB and MgO layers in multilayer magnetic tunnel junctions. Mukherjee, Sankha S.; Bai, Feiming; MacMahon, David; Lee, Chih-Ling; Gupta, Surendra K.; Kurinec, Santosh K. // Journal of Applied Physics;Aug2009, Vol. 106 Issue 3, p033906 

    The relationship between crystallization, grain growth behavior, and the diffusion of B out of CoFeB has been investigated in annealed film stacks of sputtered CoFeB|MgO using a combination of two dimensional x-ray diffraction, transmission electron microscopy, and parallel electron energy loss...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics