TITLE

Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

AUTHOR(S)
Novikov, P. L.; Le Donne, A.; Cereda, S.; Miglio, Leo; Pizzini, S.; Binetti, S.; Rondanini, M.; Cavallotti, C.; Chrastina, D.; Moiseev, T.; von Känel, H.; Isella, G.; Montalenti, F.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A joint theoretical and experimental analysis of the crystalline fraction in nanocrystalline films grown by low-energy plasma enhanced chemical vapor deposition is presented. The effect of key growth parameters such as temperature, silane flux, and hydrogen dilution ratio is analyzed and modeled at the atomic scale, introducing an environment-dependent crystallization probability. A very good agreement between experiments and theory is found, despite the use of a single fitting parameter.
ACCESSION #
36534181

 

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