TITLE

Localized growth of InAs quantum dots on nanopatterned InP(001) substrates

AUTHOR(S)
Turala, Artur; Regreny, Philippe; Rojo-Romeo, Pedro; Gendry, Michel
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present the method of site-controlled growth of InAs quantum dots on InP(001) by solid-source molecular beam epitaxy. InAs dots are positioned using nanopatterns realized by electron beam lithography and dry etching. We have obtained the localized InAs dots for InAs deposit thickness inferior to the critical thickness for the two-dimensional/three-dimensional growth mode transition measured on a flat InP surface, implying that the dots can be actively positioned at predefined nucleation sites. Photoluminescence results show the emission of localized InAs dots on patterns overgrown with a thin InP buffer layer, at a wavelength around 1.5 μm at room temperature.
ACCESSION #
36534174

 

Related Articles

  • Influence of hole shape/size on the growth of site-selective quantum dots. Mayer, Christian J; Helfrich, Mathieu F; Schaadt, Daniel M // Nanoscale Research Letters;Dec2013, Vol. 8 Issue 1, p1 

    The number of quantum dots which nucleate at a certain place has to be controllable for device integration. It was shown that the number of quantum dots per nucleation site depends on the size of the hole in the substrate, but other dimensions of the nucleation site are vague. We report on the...

  • 1.59 μm room temperature emission from metamorphic InAs/InGaAs quantum dots grown on GaAs substrates. Seravalli, L.; Frigeri, P.; Trevisi, G.; Franchi, S. // Applied Physics Letters;5/26/2008, Vol. 92 Issue 21, p213104 

    We present design, preparation by molecular beam epitaxy, and characterization by photoluminescence of long-wavelength emitting, strain-engineered quantum dot nanostructures grown on GaAs, with InGaAs confining layers and additional InAlAs barriers embedding InAs dots. Quantum dot strain induced...

  • Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate. Bennour, M.; Saidi, F.; Bouzaïene, L.; Sfaxi, L.; Maaref, H. // Journal of Applied Physics;Jan2012, Vol. 111 Issue 2, p024310 

    We present a study of the optical properties of InAs self-assembled nanostructures grown by molecular beam epitaxy on GaAs(11N)A substrates (N = 3-5). Photoluminescence (PL) measurements revealed good optical properties of InAs quantum dots (QDs) grown on GaAs(115)A compared to those grown on...

  • Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga[sub 2]O[sub 3] thin film as a mask material. Hahn, Cheol Koo; Park, Young Ju; Kim, Eun Kyu; Min, Suk-Ki; Jung, Suk Koo; Park, Jung Ho // Applied Physics Letters;10/26/1998, Vol. 73 Issue 17 

    We report on the selective formation of InGaAs quantum dots (QDs) by molecular beam epitaxy. Nanoscale patterned Ga[sub 2]O[sub 3] thin film deposited on the GaAs (100) substrate was employed as a mask material. Due to the enhanced migration effect of the group-III adatoms, such as Ga and In on...

  • Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots. Hsu, K. S.; Chiu, T. T.; Lin, Wei-Hsun; Chen, K. L.; Shih, M. H.; Lin, Shih-Yen; Chang, Yia-Chung // Applied Physics Letters;1/31/2011, Vol. 98 Issue 5, p051105 

    Microdisk lasers with active region made of type-II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. A microdisk cavity with diameter of 3.9 μm was fabricated from a 225-nm-thick GaAs layer filled with GaSb quantum dots. Lasing at wavelengths near 1000 nm at 150 K was...

  • Influence of Growth Conditions in the Case of Molecular-Beam Epitaxy on Photoluminescence Spectra of GaAs/InAs/GaAs Heterostructures with Quantum Dots near Their Initiation Threshold. Mokerov, V. G.; Fedorov, Yu. V.; Guk, A. V.; Khabarov, Yu. V.; Pak, Kh. S.; Danilochkin, A. V. // Doklady Physics;Oct2000, Vol. 45 Issue 10, p512 

    Reports on the influence of growth conditions in the case of molecular-beam epitaxy on photoluminescence spectra of heterostructures with quantum dots near their initiation threshold. Molecular beam epitaxy on semi-insulating substrates; Propose interpretation of the photoluminescence spectra;...

  • Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates. Astakhov, G. V.; Kochereshko, V. P.; Vasil’ev, D. G.; Evtikhiev, V. P.; Tokranov, V. E.; Kudryashov, I. V.; Mikhaılov, G. V. // Semiconductors;Sep99, Vol. 33 Issue 9, p988 

    The photoluminescence spectra in an external magnetic field of an ensemble of InAs quantum dots grown by molecular beam epitaxy on a (001) GaAs substrate with a disorientation in the [010] direction are studied. A redistribution of the photoexcited carriers among different groups of dots under...

  • Novel fabrication technique towards quantum dots. Der-Cherng Liu; Chien-Ping Lee // Applied Physics Letters;12/20/1993, Vol. 63 Issue 25, p3503 

    Demonstrates an in situ process for fabricating quantum dots using a single molecular beam epitaxy (MBE). Characterization of optical properties by photoluminescence; Nonexposure of the quantum dots to air; Usefulness of MBE for many optoelectronic device applications.

  • Photoluminescence and time-resolved photoluminescence characteristics of.... Kamath, K.; Chervela, N. // Applied Physics Letters;8/18/1997, Vol. 71 Issue 7, p927 

    Examines the characteristics of luminescent transition in In[sub x]Ga[sub 1-x]As/gallium arsenide self-organized single- and multiple-layer quantum dot laser structure. Growth of quantum dots by molecular beam epitaxy; Correlation between threshold excitation density and number of dot layers;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics