A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns

García, I.; Rey-Stolle, I.; Galiana, B.; Algora, C.
February 2009
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
Academic Journal
Photovoltaic conversion efficiencies of 32.6% and 30% at concentrations of 1000 and 3500 suns, respectively, are achieved in monolithic GaInP/GaAs dual-junction solar cells grown lattice matched on a GaAs substrate by metal-organic vapor-phase epitaxy. The tunnel-junction design, based on an (Al)GaAs/GaAs heterojunction, is found to be a key factor for achieving this efficiency at such high concentrations. Moreover, the thorough design and joint optimization of the front grid and the top-cell emitter, using quasi-three-dimensional distributed models, also plays a major role. Efficiencies of over 40% at 1000 suns should be achieved by extending this approach to triple-junction devices.


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