TITLE

Dependence of charge trapping and tunneling on the silicon-nitride (Si3N4) thickness for tunnel barrier engineered nonvolatile memory applications

AUTHOR(S)
Myung-Ho Jung; Kwan-Su Kim; Goon-Ho Park; Won-Ju Cho
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Charge trapping and tunneling characteristics of silicon-nitride (Si3N4) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory (NVM). A critical thickness of Si3N4 layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress method. As a result, the optimization of Si3N4 thickness considerably improved the performances of NVM.
ACCESSION #
36534169

 

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