TITLE

High-Q micromechanical resonators in a two-dimensional phononic crystal slab

AUTHOR(S)
Mohammadi, Saeed; Eftekhar, Ali Asghar; Hunt, William D.; Adibi, Ali
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/2/2009, Vol. 94 Issue 5, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
By creating line defects in the structure of a phononic crystal (PC) made by etching a hexagonal array of holes in a 15 μm thick slab of silicon, high-Q PC resonators are fabricated using a complimentary-metal-oxide-semiconductor-compatible process. The complete phononic band gap of the PC structure supports resonant modes with quality factors of more than 6000 at frequencies as high as 126 MHz. The confinement of acoustic energy is achieved by using only a few PC layers confining the cavity region. The calculated frequencies of resonance of the structure using finite element method are in a very good agreement with the experimental data. The performance of these PC resonator structures makes them excellent candidates for wireless communication and sensing applications.
ACCESSION #
36534168

 

Related Articles

  • 130 nm SiGe BiCMOS Processes Optimize Cost and Performance. Cheskis, David // Wireless Design & Development;Jun2007, Vol. 15 Issue 6, p26 

    The article reports on the use of Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) in optimizing the cost and performance of wireless communication systems. SiGe HBTs can perform better than comparably sized complementary metal oxide semiconductor (CMOS) devices. SiGe HBTs are...

  • CMOS Fuels 40-GHz Frequency Divider.  // Microwaves & RF;Apr2004, Vol. 43 Issue 4, p54 

    Discusses research being done on a 40-Ghz frequency divider based on standard silicon complementary metal oxide semiconductors technology. Reference to a study by Jri Lee and Behzad Razavi published in the April 2004 issue of the "IEEE Journal of Solid-State Circuits; Significance of frequency...

  • SiGe BiCMOS Amps Power Wireless Applications.  // Microwaves & RF;Oct2004, Vol. 43 Issue 10, p56 

    Discusses research being done on the suitability of silicon-germanium (SiGe) bipolar complementary metal oxide semiconductor heterojunction-bipolar-transistor devices for wireless power-amplifier applications. Reference to a study published in the October 2004 issue of the "IEEE Journal of...

  • Greek tool vital for multimode wireless. Bush, Steve // Electronics Weekly;6/23/2004, Issue 2152, p7 

    Modelling inductances in RFICs, and integrating their synthesis into a comprehensive design flow in CMOS, is key to multimode wireless devices at reasonable cost. However, tools to do this have been conspicuous by their absence, leading designers to adopt somewhat limited architectures when...

  • High-frequency power structures, SiGe HBTs take the spotlight. Bindra // Electronic Design;12/06/99, Vol. 47 Issue 25, p96 

    Reports on developments in radio frequency power amplifiers in the attempt to keep up with the expanding wireless-communications applications around the world. Possible use of materials such as silicon carbide for power metal oxide semiconductor field effect transistors; SiGe heterojunction...

  • A megahertz nanomechanical resonator with room temperature quality factor over a million. Verbridge, Scott S.; Craighead, Harold G.; Parpia, Jeevak M. // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p013112 

    We demonstrate the fabrication and operation of high aspect ratio tensile stressed silicon nitride string resonators. We explore the parameter space of small cross sections, on the order of 100 nm, and long lengths up to 325 μm, demonstrating that such high aspect ratio resonators can be made...

  • An electrically detected magnetic resonance study of performance limiting defects in SiC metal oxide semiconductor field effect transistors. Cochrane, C. J.; Lenahan, P. M.; Lelis, A. J. // Journal of Applied Physics;Jan2011, Vol. 109 Issue 1, p014506 

    In this study, we utilize electrically detected magnetic resonance (EDMR) techniques and electrical measurements to study defects in SiC based metal oxide semiconductor field effect transistors (MOSFETs). We compare results on a series of SiC MOSFETs prepared with significantly different...

  • Electron-spin-resonance study of radiation-induced paramagnetic defects in oxides grown on (100) silicon substrates. Kim, Yong Yun; Lenahan, P. M. // Journal of Applied Physics;10/1/1988, Vol. 64 Issue 7, p3551 

    Focuses on a study which discussed the use of electron-spin resonance to investigate radiation-induced point defects in Si/SiO[sub2] structures with (100) silicon substrates. Factor similar to the radiation-induced point defects; Cause of radiation-induced interface states; Implication of the...

  • Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance. Jock, R. M.; Shankar, S.; Tyryshkin, A. M.; He, Jianhua; Eng, K.; Childs, K. D.; Tracy, L. A.; Lilly, M. P.; Carroll, M. S.; Lyon, S. A. // Applied Physics Letters;1/9/2012, Vol. 100 Issue 2, p023503 

    We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics