TITLE

Exciton recombination in ZnO nanorods grown on GaN/sapphire template

AUTHOR(S)
Mohanta, S. K.; Tripathy, S.; X. H. Zhang; D. C. Kim; C. B. Soh; A. M. Yong; W. Liu; H. K. Cho
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The authors have employed variable temperature photoluminescence (PL) and time-resolved PL spectroscopy to probe the exciton recombination in high density and vertically aligned ZnO nanorods grown on p-type GaN/sapphire template. The low-temperature PL characterizes the dominant near-band-edge excitonic emissions from such nanorod arrays. At 4.3 K, a PL decay time of 432 ps reveals improved crystalline quality. The PL decay time shows irregular behavior due to different types of excitonic transitions dominating the PL spectra at different temperatures and a competitive effect of radiative recombination and nonradiative relaxation processes.
ACCESSION #
36435058

 

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