Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators

Zhao, Yi; Kita, Koji; Kyuno, Kentaro; Toriumi, Akira
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
In this study, we prepare the well crystallized La2O3 films by doping Y2O3 with different contents (La2-xYxO3) and examine the dielectric and electrical properties of La2-xYxO3 films experimentally. It is found that the optical band gap of La2-xYxO3 film increases with the increase in Y content (x) monotonically. Furthermore, a low leakage current of about 10-5 A/cm2 (equivalent oxide thickness: 1 nm) when the gate voltage is 1 V larger than the flat band voltage, and good capacitance-voltage characteristics in Au/La2-xYxO3/Si metal-insulator-semiconductor capacitors are observed. Our results also indicate that Pt/La2-xYxO3/Au metal-insulator-metal capacitor shows a low leakage current and a small voltage dependence of the capacitance.


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