TITLE

TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes

AUTHOR(S)
Joon-Woo Jeon; Tae-Yeon Seong; Hyunsoo Kim; Kyung-Kook Kim
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the electrical properties of TiN(30 nm)/Al(200 nm) Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Both the as-deposited samples show Ohmic behaviors with contact resistivity of (6.0–7.2)×10-4 Ω cm2. However, annealing the samples at 300 °C causes the degradation of their electrical properties. Furthermore, unlike the TiN/Al contacts, the Ti/Al contacts suffer from aging degradation when exposed to air. Based on the x-ray photoemission spectroscopy and secondary ion mass spectrometry results, Ohmic formation and degradation mechanisms are briefly described and discussed.
ACCESSION #
36435047

 

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