TITLE

Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering

AUTHOR(S)
Cornelius, S.; Vinnichenko, M.; Shevchenko, N.; Rogozin, A.; Kolitsch, A.; Möller, W.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The study is focused on the improvement of the free electron mobility in Al-doped ZnO films grown by reactive pulsed magnetron sputtering. At optimum growth conditions low-absorbing films are obtained with a Hall mobility of 46 cm2 V-1 s-1, a free electron density of 6.0×1020 cm-3, and an electrical resistivity of 2.26×10-4 Ω cm. The relation between the mobility and free electron density for different growth conditions is discussed in terms of ionized impurity scattering, impurity clustering, and grain boundary limited transport.
ACCESSION #
36435044

 

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