Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering

Cornelius, S.; Vinnichenko, M.; Shevchenko, N.; Rogozin, A.; Kolitsch, A.; Möller, W.
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
The study is focused on the improvement of the free electron mobility in Al-doped ZnO films grown by reactive pulsed magnetron sputtering. At optimum growth conditions low-absorbing films are obtained with a Hall mobility of 46 cm2 V-1 s-1, a free electron density of 6.0×1020 cm-3, and an electrical resistivity of 2.26×10-4 Ω cm. The relation between the mobility and free electron density for different growth conditions is discussed in terms of ionized impurity scattering, impurity clustering, and grain boundary limited transport.


Related Articles

  • Characterization of ZnO plasma in a radio frequency sputtering system. Joshy, N. V.; Isaac, Johney; Jayaraj, M. K. // Journal of Applied Physics;Jun2008, Vol. 103 Issue 12, p123305 

    Plasma generated by the radio frequency (rf) magnetron sputtering of gallium doped zinc oxide (ZnO) has been studied using cylindrical Langmuir probe and optical emission spectroscopy. The electron density and electron temperature were calculated for various rf powers at different spatial...

  • Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering. Dae-Kue Hwang; Hyun-Sik Kim; Jae-Hong Lim; Jin-Yong Oh; Jin-Ho Yang; Seong-Ju Park; Kyoung-Kook Kim; Look, D. C.; Park, Y. S. // Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p151917 

    Phosphorus-doped p-type ZnO thin films were grown on sapphire by radio-frequency magnetron sputtering. The photoluminescence (PL) spectra revealed an acceptor bound exciton peak at 3.355 eV and a conduction band to the acceptor transition caused by a phosphorus related level at 3.310 eV. A study...

  • p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering. Wang, Peng; Chen, Nuofu; Yin, Zhigang; Dai, Ruixuan; Bai, Yiming // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p202102 

    Sb-doped Zn1-xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05≤=x≤=0.13) was confirmed by Hall measurements, revealing a hole concentration of 1015–1016 cm-3 and a mobility of 0.6–4.5...

  • V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films. Yang, Y. C.; Song, C.; Zeng, F.; Pan, F.; Xie, Y. N.; Liu, T. // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p242903 

    V-doped ZnO films have been prepared on Si(111) substrates by direct current reactive magnetron cosputtering. Hysteresis loops of polarization–applied field characteristics with a remnant polarization of 0.2 μC/cm2 were obtained in (2.5 at. %) V-doped ZnO films, indicating the...

  • Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications. Chang, Wen-Yuan; Lai, Yen-Chao; Wu, Tai-Bor; Wang, Sea-Fue; Chen, Frederick; Tsai, Ming-Jinn // Applied Physics Letters;1/14/2008, Vol. 92 Issue 2, p022110 

    Highly (002)-oriented and columnar-grained ZnO thin films were prepared by radio frequency magnetron sputtering at room temperature. The Pt/ZnO/Pt devices exhibit reversible and steady bistable resistance switching behaviors with a narrow dispersion of the resistance states and switching...

  • Enhancement of magnetic moment of Co-doped ZnO films by postannealing in vacuum. Li, Xiao-Li; Wang, Zhu-Liang; Qin, Xiu-Fang; Wu, Hai-Shun; Xu, Xiao-Hong; Gehring, G. A. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 2, p023911 

    The Co-doped ZnO thin films were prepared on c-cut sapphire substrates by magnetron cosputtering, and then annealed at various temperatures in vacuum. Magnetic measurements indicate that all the films are ferromagnetic at room temperature and the magnetization of the annealed Zn0.88Co0.12O films...

  • Room temperature growth of high quality ZnO thin film on sapphire substrates. Nam Ho Kim; Hyoun Woo Kim // Journal of Materials Science;May2004, Vol. 39 Issue 9, p3235 

    Discusses the room temperature growth of zinc oxide thin film on sapphire substrates. Versatility due to structural, electrical, and optical properties; Radio frequency magnetron sputtering system; Collision of metal atoms and reactive gas molecules on the substrate; X-ray diffraction patterns;...

  • Room-temperature ferromagnetism in (Mn, N)-codoped ZnO thin films prepared by reactive magnetron cosputtering. Xu, H. Y.; Liu, Y. C.; Xu, C. S.; Liu, Y. X.; Shao, C. L.; Mu, R. // Applied Physics Letters;6/12/2006, Vol. 88 Issue 24, p242502 

    (Mn, N)-codoped ZnO films were grown on fused silica substrates by reactive magnetron cosputtering. X-ray diffraction measurements reveal that the films have the single-phase wurtzite structure with c-axis preferred orientation. X-ray photoelectron spectroscopy studies indicate the incorporation...

  • Surface plasmon enhanced ultraviolet emission from ZnO films deposited on Ag/Si(001) by magnetron sputtering. You, J. B.; Zhang, X. W.; Fan, Y. M.; Qu, S.; Chen, N. F. // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p231907 

    The ZnO films were grown on Ag/Si(001) substrates by sputtering Ag and ZnO targets successively in a pure Ar ambient. A significant enhancement of ZnO ultraviolet emission and a reduction of its full width of half maximum have been observed while introducing a 100 nm Ag interlayer between ZnO...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics