Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors

Jin-Seong Park; Jae Kyeong Jeong; Yeon-Gon Mo; Sangwook Kim
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
We investigated the effect of the high-k TiOx (k∼40) gate dielectric on the mobility (μFE) of indium-gallium-zinc oxide (IGZO) transistors. As the thickness of the TiOx layer at the interface of the IGZO channel and SiNx gate dielectric layer increased from 2 to 8 nm, the μFE value was monotonously reduced from 9.9 to 1.8 cm2/V s. The degradation of the mobility was attributed to the Coulomb scattering mechanism rather than the phonon scattering mechanism of the high-k TiOx layer based on the behavior of the temperature-dependent mobilities for all of the IGZO transistors.


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