Influence of growth mode on the structural, optical, and electrical properties of In-doped ZnO nanorods

M. N. Jung; J. E. Koo; S. J. Oh; B. W. Lee; W. J. Lee; S. H. Ha; Y. R. Cho; J. H. Chang
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
The growth mechanism of In-doped ZnO (ZnO:In) nanorods grown on AuGe/Si(111) substrates has been investigated. Unlike to general vapor-liquid-solid mechanism, the adatom kinetics on the surface determines the length-diameter relationship [L(D)], initial nuclei size (D*), and spatial distribution of impurity atoms. The incorporated In-concentration was estimated to be within solid solubility limit of ZnO in terms of x-ray diffraction analysis, but the evolution of photoluminescence peak position and intensity revealed an evidence of extrinsic carrier increment. Hall-effect measurement was used to evaluate the carrier concentration of ZnO:In nanorods.


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