Toward metal-organic insulator-semiconductor solar cells, based on molecular monolayer self-assembly on n-Si

Har-Lavan, Rotem; Ron, Izhar; Thieblemont, Florent; Cahen, David
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
Alkyl chain molecules on n-Si were used to test the concept of hybrid metal-organic insulator-semiconductor (MOIS) solar cells. Test structures were made by binding alkyl chain molecules via Si–O–C bonds to oxide-free n-Si surfaces, using self-assembly. With thiol groups at the terminals away from the Si, binding of Au nanoparticles, followed by electroless Au plating yields semitransparent top contacts. First cells give, under 25 mW/cm2 white light illumination, open-circuit voltage Voc=0.48 V and fill factor FF=0.58. Because with sulfur termination the molecules have a dipole that limits inversion of the Si, we also used methyl-terminated monolayers. Even though then we can work, at this point, only with a Hg top contact, without chemical bond to the molecules, we get, using only radiation (∼AM 1.5) collected around the contact, the expected higher Voc=0.54 V, and respectable 0.8 FF, justifying further MOIS cell development.


Related Articles

  • Determination of high-density interface state parameters in metal-insulator-semiconductor structures by deep-level transient spectroscopy. Murray, F.; Carin, R.; Bogdanski, P. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3592 

    Presents a study that reconsidered the interpretation of experimental results concerning insulator-semiconductor interface states in metal-insulator-semiconductor structures obtained with the deep-level transient spectroscopy techniques particularly in high density interface states distributed...

  • Metal-insulator transition in n-3 C-SiC epitaxial films. Lebedev, A. A.; Abramov, P. L.; Agrinskaya, N. V.; Kozub, V. I.; Kuznetsov, A. N.; Lebedev, S. P.; Oganesyan, G. A.; Tregubova, A. S.; Chernyaev, A. V.; Shamshur, D. V.; Skvortsova, M. O. // Semiconductors;Mar2009, Vol. 43 Issue 3, p318 

    n-Type 3 C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal-insulator transition...

  • Spin dynamics across the metal-insulator transition. Sachdev, Subir; Bhatt, R. N. // Journal of Applied Physics;4/15/1987, Vol. 61 Issue 8, p4366 

    Presents information on a study which investigated the dynamics of electron spins in disordered insulators and metals. Behavior believed to be an important factor in determining the universality class within the scaling picture of the metal-insulator transition; Description of the spin dynamics...

  • The tin precursors and hydrogen peroxide effects on spray-deposited SnO2:F-(n)Si solar cells. Adnane, M.; Cachet, H.; Folcher, G.; Hamzaoui, S.; Sahraoui, T.; Bouderbala, M.; Zerdali, M. // European Physical Journal - Applied Physics;Oct2011, Vol. 56 Issue 1, pN.PAG 

    The oxide semiconductor compounds such as SnO2, In2O3, ITO, ZnO and others brought about a new attention for the metal-insulator-semiconductor structures as photovoltaic converters because of the high values of transmission and conductivity and the possibility of metal replacement in...

  • Auger electron spectroscopy study of alloy formation on MIS solar-cell metal surfaces. Pandelisˇev, Kiril A.; Wang, Edward Y. // Journal of Applied Physics;3/15/1985, Vol. 57 Issue 6, p2271 

    Presents a study which examined the alloy formation on metal-insulator-silicon (MIS) solar cell metal surfaces due to drive-out diffusion. Dynamics of the silver-ion alloy formation; Factors which affect the metal work functions and electronic performance of the MIS solar cells; Auger energy...

  • Local current-voltage characteristics of rough TiO2 layers on TiSi2. Ilango, S.; Raghavan, G.; Kamruddin, M.; Tyagi, A. K. // Applied Physics Letters;11/6/2006, Vol. 89 Issue 19, p192112 

    The nature of charge transport across rough, insulating layers of TiO2 on TiSi2 is investigated using conducting atomic force microscopy. The conducting tip, the insulating layer, and the metallic TiSi2 layer constitute a metal-insulator-metal system. This system exhibits a strong correlation...

  • Safety Requirements and Inspections Methods for Insulating Components Used in Electrical Accessories. Weidong Chen; Chunyu Guo // Applied Mechanics & Materials;2014, Issue 686, p36 

    This paper covers the safety requirements and inspection methods for insulating components used in electrical accessories by an analyzing the properties of the insulating components used in electrical accessories based on the standard of IEC 60884.

  • Electronic properties of self-assembled alkyl monolayers on Ge surfaces. Sharp, I. D.; Schoell, S. J.; Hoeb, M.; Brandt, M. S.; Stutzmann, M. // Applied Physics Letters;6/2/2008, Vol. 92 Issue 22, p223306 

    Covalent attachment of alkyl monolayers on (111) and (100) oriented Ge surfaces was achieved via thermal hydrogermylation with 1-octadecene (C18H36), a process which is directly analogous to the well-known hydrosilylation reaction on Si. Current-voltage (IV) and high frequency...

  • Insulator-metal transitions in Pr[sub 0.7]Ca[sub 0.3]MnO[sub 3] induced by a magnetic field. Barratt, J.; Lees, M.R. // Applied Physics Letters;1/15/1996, Vol. 68 Issue 3, p424 

    Investigates the magnetic field induced insulator-metal transitions in both polycrystalline and single crystal samples of Pr[sub 0.7]Ca[sub 0.3]MnO[sub 3]. Preparation of samples by a standard ceramic processing route; Relevance of magnetic induction in the transition resistivity; Effect of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics