TITLE

Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation

AUTHOR(S)
Dkhissi, A.; Upadhyay, A. K.; Hemeryck, A.; Estève, A.; Landa, G.; Pochet, P.; Rouhani, M. Djafari
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Density functional theory calculations are used to identify preferential sites for oxygen adsorption on SiGe. It is shown that Ge atoms hinder O incorporation in their vicinity. Additionally, the silanone structure, known to be the key intermediate prior to silicon dioxide formation, is shown to be not favorable when close to a Ge site on the surface.
ACCESSION #
36434986

 

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