Evidence of the Ge nonreactivity during the initial stage of SiGe oxidation

Dkhissi, A.; Upadhyay, A. K.; Hemeryck, A.; Estève, A.; Landa, G.; Pochet, P.; Rouhani, M. Djafari
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
Density functional theory calculations are used to identify preferential sites for oxygen adsorption on SiGe. It is shown that Ge atoms hinder O incorporation in their vicinity. Additionally, the silanone structure, known to be the key intermediate prior to silicon dioxide formation, is shown to be not favorable when close to a Ge site on the surface.


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