Flexible and transparent supercapacitor based on In2O3 nanowire/carbon nanotube heterogeneous films

Chen, Po-Chiang; Shen, Guozhen; Sukcharoenchoke, Saowalak; Zhou, Chongwu
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
In this paper, a supercapacitor with the features of optical transparency and mechanical flexibility has been fabricated using metal oxide nanowire/carbon nanotube heterogeneous film, and studies found that the power density can reach 7.48 kW/kg after galvanostatic measurements. In addition, to study the stability of flexible and transparent supercapacitor, the device was examined for a large number of cycles and showed a good retention of capacity (∼88%). This approach could work as the platform for future transparent and flexible nanoelectronics.


Related Articles

  • Potential opportunities for nanotechnology in electronics manufacturing. Doering, Robert // Solid State Technology;Jan2011, Vol. 54 Issue 1, p12 

    The article focuses on the potential application of nanotechnology in electronics manufacturing. Nanomaterials are used in replacements for traditional materials, such as graphene, a single atomic layer of graphite that has the potential application in ultracapacitors, transparent conductive...

  • Contact transparency inducing low bias negative differential resistance in two capped carbon nanotubes sandwiching σ barrier. Min, Y.; Fang, J.; Zhong, C.; Dong, Z.; Li, J.; Yao, K.; Zhou, L. // Applied Physics A: Materials Science & Processing;Jan2015, Vol. 118 Issue 1, p367 

    A first-principles study of the transport properties of two capped (5, 5) carbon nanotubes sandwiching σ barrier is reported. Contact transparency at zero bias is obtained. Strong negative differential resistance effect with large peak-to-valley ratio of 1,124 % is present under very low...

  • Mesoporous Transition Metal Oxides for Supercapacitors. Yan Wang; Jin Guo; Tingfeng Wang; Junfeng Shao; Dong Wang; Ying-Wei Yang // Nanomaterials (2079-4991);2015, Vol. 5 Issue 4, p1667 

    Recently, transition metal oxides, such as ruthenium oxide (RuO2), manganese dioxide (MnO2), nickel oxides (NiO) and cobalt oxide (Co3O4), have been widely investigated as electrode materials for pseudo-capacitors. In particular, these metal oxides with mesoporous structures have become very hot...

  • Reliability analysis of buffer stage in mixed signal application. More, S.; Fulde, M.; Chouard, F.; Schmitt-Landsiedel, D. // Advances in Radio Science;2011, Vol. 9, p225 

    This paper discusses reliability analysis of a buffer circuit targeted for an analog to digital converter application. The circuit designed in a 32 nm high-κ metal gate CMOS technology was investigated by circuit simulation and sensitivity analysis. This analysis was conducted for realistic...

  • CMOS Biosensor using TSV Interposer Technology. Ebefors, Thorbjörn; Fredlund, Jessica; Jung, Erik; Braun, Tanja // Advancing Microelectronics;May/Jun2014, Vol. 41 Issue 3, p14 

    This paper reports on the successful manufacture of metallized TSV interposer technology as a through molded via element in wafer level packaging of CMOS biosensors. The work has been executed by Silex Microsystems and Fraunhofer IZM, within the ED'-consortium CAJAL4EU, where originally 29...

  • Application of Nanomaterials in Co-ordination with VLSI Design Process. Shrigiri, Shilpa B.; Mytri, V. D.; Shrigiri, Basavraj M. // International Journal of Nanotechnology & Applications;2010, Vol. 4 Issue 2, p1 

    It is generally acknowledged that nanoelectronics will eventually replace traditional silicon CMOS in high-performance integrated circuits. To that end, considerable investments are being made in the research and development of new nanoelectronic devices and fabrication techniques. When these...

  • Study on transport pathway in oxide nanowire growth by using spacing-controlled regular array. Klamchuen, Annop; Yanagida, Takeshi; Kanai, Masaki; Nagashima, Kazuki; Oka, Keisuke; Rahong, Sakon; Gang, Meng; Horprathum, Mati; Suzuki, Masaru; Hidaka, Yoshiki; Kai, Shoichi; Kawai, Tomoji // Applied Physics Letters;11/7/2011, Vol. 99 Issue 19, p193105 

    Metal oxide nanowires formed via vapor-liquid-solid (VLS) process are promising nanoscale building blocks. Although understanding material transport pathways across three phases is crucial to realize well-defined oxide nanowires, such knowledge is unfortunately far from comprehensive. Here we...

  • Rapid Communications: Low-temperature gas sensing in individual metal-oxide-metal heterojunction nanowires. Tresback, Jason S.; Padture, Nitin P. // Journal of Materials Research;Aug2008, Vol. 23 Issue 8, p1 

    CO-gas-sensing response of individual metal-oxide-metal (MOM) heterojunction nanowires (~250 nm diameter) in the Au-NiO-Au system, where a nanoscale segment of NiO oxide (~250 nm long) is sandwiched axially between Au nanowires, and between individual all-oxide NiO nanowires (~250 nm diameter,...

  • A transition in mechanisms of size dependent electrical transport at nanoscale metal-oxide interfaces. Hou, Jiechang; Nonnenmann, Stephen S.; Qin, Wei; Bonnell, Dawn A. // Applied Physics Letters;12/16/2013, Vol. 103 Issue 25, p252106 

    As device miniaturization approaches nanoscale dimensions, interfaces begin to dominate electrical properties. Here the system archetype Au/SrTiO3 is used to examine the origin of size dependent transport properties along metal-oxide interfaces. We demonstrate that a transition between two...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics