Low-voltage flexible organic complementary inverters with high noise margin and high dc gain

Zhang, Xiao-Hong; Potscavage, William J.; Choi, Seungkeun; Kippelen, Bernard
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
We report on flexible organic complementary inverters using pentacene and C60 as active semiconductors fabricated on a plastic substrate. Individual transistors as well as inverters show good operational stability with negligible hysteresis. The threshold voltages are comparable for p-channel pentacene and n-channel C60 organic field-effect transistors, and noise margins larger than 80% of the maximum theoretical values were obtained at a supply voltage VDD as low as 3 V. A high dc gain of 180 was achieved at VDD=5 V. The inverters demonstrated good mechanical stability when tested after bending under both tensile and compressive stress.


Related Articles

  • Photogating and electrical-gating of amorphous GaSnZnO-based inverter with light-transmitting gate electrode. Hee Sung Lee; Lee, Kwang H.; Youn-Gyoung Chang; Raza, Syed Raza Ali; Seongil Im; Dong-Ho Kim; Hye-Ri Kim; Gun-Hwan Lee // Applied Physics Letters;5/30/2011, Vol. 98 Issue 22, p223505 

    Photoinverter and electrical-inverter applications of amorphous GaSnZnO thin-film transistors (GTZO-TFTs) with Al2O3 dielectrics were studied. The inverters were composed of two serially connected top-gate GTZO-TFTs with different gate electrodes: semitransparent conducting NiOx and opaque Al....

  • Low-voltage-operating complementary inverters with C60 and pentacene transistors on glass substrates. Kitamura, Masatoshi; Arakawa, Yasuhiko // Applied Physics Letters;7/30/2007, Vol. 91 Issue 5, p053505 

    Organic complementary inverters with C60 and pentacene thin-film transistors (TFTs) have been fabricated on glass substrate. The inverter operated at low voltages of 1–5 V. The C60 and pentacene TFTs had high field-effect mobilities of 0.68 and 0.59 cm2/V s, and threshold voltage of 0.80...

  • Complementary inverter based on interface doped pentacene. Ahles, Marcus; Schmechel, Roland; von Seggern, Heinz // Applied Physics Letters;9/12/2005, Vol. 87 Issue 11, p113505 

    An organic complementary metal–oxide–semiconductor (O-CMOS) inverter is presented, which is based on a single pentacene layer acting both as n- and p-type organic semiconductors. The circuit consists of two spatially separated transistors realized by pairs of calcium and gold...

  • Organic inverter circuits employing ambipolar pentacene field-effect transistors. Singh, Th. B.; Senkarabacak, P.; Sariciftci, N. S.; Tanda, A.; Lackner, C.; Hagelauer, R.; Horowitz, Gilles // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p033512 

    Ambipolar transport has been observed in pentacene films grown on polyvinyl alcohol gate dielectric with hole and electron mobilities of 0.3 and 0.04 cm2/V s, respectively. A simple device structure with Au as source-drain electrode can be used to operate a transistor in both p-channel and...

  • Low-voltage and high-gain pentacene inverters with plasma-enhanced atomic-layer-deposited gate dielectrics. Jae Bon Koo; Sun Jin Yun; Jung Wook Lim; Seong Hyun Kim; Chan Hoe Ku; Sang Chul Lim; Jung Hun Lee; Taehyoung Zyung // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p033511 

    The pentacene thin-film transistors with the plasma-enhanced atomic-layer-deposited 150 nm thick Al2O3 or 120 nm thick ZrO2 have been operated at gate voltages between -3 and 3 V. The inverter with a ZrO2 gate dielectric shows a gain of 49 and a full swing from supply voltage (Vdd) to 0 V,...

  • Hysteresis and threshold voltage shift of pentacene thin-film transistors and inverters with Al2O3 gate dielectric. Koo, Jae Bon; Ku, Chan Hoe; Lim, Sang Chul; Kim, Seong Hyun; Lee, Jung Hun // Applied Physics Letters;3/26/2007, Vol. 90 Issue 13, p133503 

    The pentacene organic thin-film transistors (OTFTs) with plasma-enhanced atomic-layer-deposited 150 nm thick Al2O3 as a gate dielectric and the inverters comprised of these OTFTs have been fabricated. The hysteresis in transfer characteristics of the OTFTs depends on the scan range of negative...

  • Power Quality Management in DG-Grid Interfaced Systems with DSTATCOM. Patidar, R. D.; Singh, S. P. // Proceedings of World Academy of Science: Engineering & Technolog;Mar2009, Vol. 51, p641 

    This paper deals with the simulation of a Distribution Static Compensator (DSTATCOM) for power quality improvement in Distributed Generation (DG)-Grid interfaced systems. The DSTATCOM consists of a four-leg Insulated Gate Bipolar Transistor (IGBT)-based Current-Controlled Voltage Source Inverter...

  • Modelling and Control of a Three-Phase Stacked Multilevel Voltage Source Inverter. Ammar, F. Ben; Smida, M. Ben // International Review of Electrical Engineering;Sep/Oct2006, Vol. 1 Issue 4, p480 

    The flying voltage source multilevel inverters are suitable in high voltage, high power applications, to bypass technologic limitations of the semiconductors devices. In this paper authors propose a general mathematical model for a new topology called SMC "Stacked Multicell Converter". Each...

  • A Simple Control of Shunt Active Power Filter to Enhancing Current Quality. Najafi, M.; Hoseynpoor, M.; Davoodi, M.; Karimi, T. // Australian Journal of Basic & Applied Sciences;2011, Vol. 5 Issue 7, p678 

    Active power filters have been widely used for harmonic elimination. Application of nonlinear loads and semiconductor switched devices in distribution systems results in many problems in quality of power. In this paper the performance of a conventional three-phase shunt Active Power Filter (APF)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics