High resolution electron microscopy of GaAs capped GaSb nanostructures

Molina, S. I.; Beltrán, A. M.; Ben, T.; Galindo, P. L.; Guerrero, E.; Taboada, A. G.; Ripalda, J. M.; Chisholm, M. F.
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
We show in this work that GaAs capping of 2 ML of GaSb grown by molecular beam epitaxy results in the formation of very small (with heights of about 1 nm) GaAsxSb1-x nanostructures surrounded by a GaAs rich layer. This conclusion is obtained by analyzing the morphology of the GaAsxSb1-x nanostructures by high resolution scanning transmission electron microscopy in Z-contrast mode. This result shows that a significant fraction of the Sb atoms must segregate along the growth direction during the GaAs capping process.


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