Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?

Khriachtchev, Leonid; Nikitin, Timur; Velagapudi, Rama; Lahtinen, Jouko; Novikov, Sergei
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
The experimental data obtained with Raman, x-ray photoelectron, and continuous-wave and time-resolved photoluminescence spectroscopies on silicon-rich silicon oxide samples with different O/Si ratios and annealing temperatures are analyzed. It is shown that Si grains, with atoms bound as in bulk Si, are not the direct emitting phase, which is in agreement with the model of localized light-emitting centers. These oxygen-defect centers probably locate in suboxide structures and the excitation migrates to them from the absorbing Si grains. The photoluminescence quantum yield strongly increases for samples with larger O/Si ratios, suggesting a nonradiative capture of migrating excitons in Si grains.


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