Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

Antolín, E.; Martí, A.; Olea, J.; Pastor, D.; González-Díaz, G.; Mártil, I.; Luque, A.
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 1020–1021 cm-3 concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.


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