Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Sun, Jie; Larsson, Marcus; Maximov, Ivan; Hardtdegen, Hilde; Xu, H. Q.
January 2009
Applied Physics Letters;1/26/2009, Vol. 94 Issue 4, pN.PAG
Academic Journal
Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-κ HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.


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