TITLE

Voltage control of in-plane magnetic anisotropy in ultrathin Fe/n-GaAs(001) Schottky junctions

AUTHOR(S)
Ohta, K.; Maruyama, T.; Nozaki, T.; Shiraishi, M.; Shinjo, T.; Suzuki, Y.; Ha, S.-S.; You, C.-Y.; Van Roy, W.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/19/2009, Vol. 94 Issue 3, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the realization of voltage control of in-plane magnetic anisotropy at room temperature in ultrathin Fe/n-GaAs(001) Schottky junctions. Clear voltage-induced changes in magnetic anisotropy were observed in a Kerr ellipticity hysteresis loop using a lock-in modulation technique. The maximum change reached 4.5% of the saturation ellipticity under the application of a sinusoidal voltage signal of 1 V peak-to-peak in an Fe layer with a thickness of 0.64 nm. These results reveal the feasibility of controlling the in-plane magnetization process by the use of a perpendicular electric field. This can be a useful technique in ultralow power magnetization switching.
ACCESSION #
36339328

 

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