TITLE

In situ characterization of initial growth of HfO2

AUTHOR(S)
Wang, L.; Chu, Paul K.; Xue, K.; Xu, J. B.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/19/2009, Vol. 94 Issue 3, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The initial growth of HfO2 on Si (111) is monitored in situ by ultrahigh vacuum (UHV) scanning probe microscopy. UHV scanning tunneling microscopy and UHV atomic force microscopy reveal the topography of HfO2 films in the initial stage. The chemical composition is further confirmed by x-ray photoelectron spectroscopy. Scanning tunneling spectroscopy is utilized to inspect the evolution of the bandgap. When the film thickness is less than 0.6 nm, the bandgap of HfO2 is not completely formed. A continuous usable HfO2 film with thickness of about 1.2 nm is presented in this work.
ACCESSION #
36339308

 

Related Articles

  • Development of a scanning atom probe and atom-by-atom mass analysis of diamonds. Nishikawa, O.; Sekine, T.; Ohtani, Y.; Maeda, K.; Numada, Y.; Watanabe, M.; Iwatsuki, M.; Aoki, S.; Itoh, J.; Yamanaka, K. // Applied Physics A: Materials Science & Processing;1998, Vol. 66 Issue 7, pS11 

    Abstract. A scanning atom probe (SAP) was constructed by modifying an ultrahigh vacuum scanning tunneling microscope. A unique feature of the SAP is the introduction of a funnel-shaped microextraction electrode to a conventional atom probe. The electrode scans over an unsmoothed specimen surface...

  • Quantitative two-dimensional carrier profiling of a 400 nm complementary metal-oxide-semiconductor device by Schottky scanning capacitance microscopy. Tran, T.; Nxumalo, J. N.; Li, Y.; Thomson, D. J.; Bridges, G. E.; Oliver, D. R. // Journal of Applied Physics;12/1/2000, Vol. 88 Issue 11, p6752 

    Carrier profiling of a 400 nm complementary metal-oxide-semiconductor device has been accomplished by combining metal-semiconductor capacitance-voltage profiling techniques with two-dimensional scanning probe microscopy. When a metal probe is brought into contact with a semiconductor, a...

  • A new design for a UHV compatible Czochralski crystal growth system. Brown, S. A.; Howard, B. K.; Brown, S. V.; Julian, S. R. // Review of Scientific Instruments;Sep90, Vol. 61 Issue 9, p2427 

    We describe the design of a new system for the Czochralski growth of single crystals of intermetallic materials under ultrahigh vacuum conditions. Particular attention has been paid to an arrangement for very uniform movement of the pulling mechanism. We report the growth of large high-quality...

  • Inverter made of complementary p and n channel transistors using a single directly deposited... Yu Chen; Wagner, Sigurd // Applied Physics Letters;8/23/1999, Vol. 75 Issue 8, p1125 

    Examines a p channel thin-film transistor (TFT) made of directly deposited microcrystalline silicon. Integration of the TFT with its n channel counterpart on a single Si film; Post-deposition TFT process temperature; Complementary metal-silicon oxide silicon inverter fabricated from the...

  • Unique method to electrically characterize a single stacking fault in silicon-on-insulator metal-oxide-semiconductor field-effect transistors. Yang, J.; Neudeck, G. W.; Neudeck, G.W.; Denton, J. P.; Denton, J.P. // Applied Physics Letters;12/11/2000, Vol. 77 Issue 24 

    A unique and simple method is demonstrated for characterizing the electrical behavior of a single stacking fault in thin-film fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). SOI islands were created using selective epitaxial...

  • Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique. Chen, Ying-Chih; Huang, Chun-Yuan; Yu, Hsin-Chieh; Su, Yan-Kuin // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p034518 

    The nonvolatile memory thin film transistors (TFTs) using a core/shell CdSe/ZnS quantum dot (QD)-poly(methyl methacrylate) (PMMA) composite layer as the floating gate have been demonstrated, with the device configuration of n+-Si gate/SiO2 insulator/QD-PMMA composite layer/pentacene channel/Au...

  • High-k Gate Dielectrics of Thin Films with its Technological Applications - A Review.  // International Journal of Pure & Applied Sciences & Technology;Jun2011, Vol. 4 Issue 2, p105 

    The article presents a study which examines the use of high-k gate dielectrics to suppress excessive transistor gate leakage and demonstrate how power consumption could speed up the introduction of metal gates in complementary metal oxide semiconductor (CMOS) transistors. The authors evaluated...

  • Crystal cleavage mechanism for UHV scanning tunneling microscopy. Oreshkin, A. I.; Muzychenko, D. A.; Radchenko, I. V.; Mancevich, V. N.; Panov, V. I.; Oreshkin, S. I. // Review of Scientific Instruments;Nov2006, Vol. 77 Issue 11, p116116 

    A device for UHV cleavage of crystal specimens for the use with scanning tunneling microscopy (STM) has been suggested and developed. We present a device suitable for the precise cleavage of semiconductors. The device needs only small space and can be easily mounted in a small and compact UHV...

  • Combining low-energy electron microscopy and scanning probe microscopy techniques for surface science: Development of a novel sample-holder. Cheynis, F.; Leroy, F.; Ranguis, A.; Detailleur, B.; Bindzi, P.; Veit, C.; Bon, W.; Müller, P. // Review of Scientific Instruments;2014, Vol. 84 Issue 4, p1 

    We introduce an experimental facility dedicated to surface science that combines Low-Energy Electron Microscopy/Photo-Electron Emission Microscopy (LEEM/PEEM) and variable-temperature Scanning Probe Microscopy techniques. A technical challenge has been to design a sample-holder that allows to...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics