TITLE

Origin of surface potential change during ferroelectric switching in epitaxial PbTiO3 thin films studied by scanning force microscopy

AUTHOR(S)
Yunseok Kim; Changdeuck Bae; Kyunghee Ryu; Hyoungsoo Ko; Yong Kwan Kim; Seungbum Hong; Hyunjung Shin
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/19/2009, Vol. 94 Issue 3, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We investigated the surface potential of the ferroelectric domains of the epitaxial PbTiO3 (PTO) films using both Kelvin probe and piezoresponse force microscopy. The surface potential changes as a function of applied biases suggested that the amount and sign of surface potentials depend on the correlation between polarization and screen charges. It also suggested that the trapped negative charges exist on the as-deposited PTO surfaces. Injected charges and their resultant surface potentials are investigated by grounded tip scans. The results unveiled the origin of surface potential changes during ferroelectric switching in the epitaxial PTO films.
ACCESSION #
36339296

 

Related Articles

  • Nanoscale ferroelectric switching behavior at charged domain boundaries studied by angle-resolved piezoresponse force microscopy. Park, Moonkyu; Hong, Seungbum; Kim, Jiyoon; Hong, Jongin; No, Kwangsoo // Applied Physics Letters;10/3/2011, Vol. 99 Issue 14, p142909 

    We investigated the effect of charged domain boundaries (CDBs) on the coercive voltage (Vc) in polycrystalline Pb(Zr0.25Ti0.75)O3 (PZT) thin films using angle-resolved piezoresponse force microscopy (AR-PFM). By using the AR-PFM technique, we could observe the detailed domain structure with...

  • Scaling of structure and electrical properties in ultrathin epitaxial ferroelectric heterostructures. Nagarajan, V.; Junquera, J.; He, J. Q.; Jia, C. L.; Waser, R.; Lee, K.; Kim, Y. K.; Baik, S.; Zhao, T.; Ramesh, R.; Ghosez, Ph.; Rabe, K. M. // Journal of Applied Physics;9/1/2006, Vol. 100 Issue 5, p051609 

    Scaling of the structural order parameter, polarization, and electrical properties was investigated in model ultrathin epitaxial SrRuO3/PbZr0.2Ti0.8O3/SrRuO3/SrTiO3 heterostructures. High-resolution transmission electron microscopy images revealed the interfaces to be sharp and fully coherent....

  • Polarization switching kinetics of ferroelectric nanomesas of vinylidene fluoride-trifluoroethylene copolymer. Gaynutdinov, R. V.; Lysova, O. A.; Yudin, S. G.; Tolstikhina, A. L.; Kholkin, A. L.; Fridkin, V. M.; Ducharme, Stephen // Applied Physics Letters;7/13/2009, Vol. 95 Issue 2, p023303 

    The polarization switching kinetics of ferroelectric polymer nanomesas was investigated using piezoresponse force microscopy. The nanomesas were made by self-organization from Langmuir–Blodgett films of a 70% vinylidene fluoride and 30% trifluoroethylene copolymer. The polarization...

  • Effects of ferroelectric dead layer on the electron transport in ferroelectric tunneling junctions. Sun, Ping; Wu, Yin-Zhong; Cai, Tian-Yi; Ju, Sheng // Applied Physics Letters;8/1/2011, Vol. 99 Issue 5, p052901 

    Ferroelectric dead layer is intrinsic and inevitable at the metal-ferroelectrics interface. In general, it is detrimental to the application of nanoscale devices; however, in ferroelectric tunneling junctions with ferroelectric dead layer, an enhanced tunneling electroresistance (TER) can be...

  • Lifetime estimation due to imprint failure in ferroelectric SrBi[sub 2]Ta[sub 2]O[sub 9] thin films. Grossmann, M.; Lohse, O.; Bolten, D.; Boettger, U.; Waser, R.; Hartner, W.; Kastner, M.; Schindler, G. // Applied Physics Letters;1/17/2000, Vol. 76 Issue 3 

    Two different failure modes for a ferroelectric memory cell caused by imprint, the read failure due to the loss of polarization, and the write failure due to the shift of the hysteresis loop are investigated. The quasistatic hysteresis loop allows us to distinguish which failure mode is...

  • Polarization kinetics of a ferroelectric with complex modulated structure. Gladkiı, V. V.; Kirikov, V. A. // JETP Letters;7/10/99, Vol. 70 Issue 1, p42 

    Anomalous changes of the spontaneous polarization, the coercive field, and the spectrum of the distribution of polarization relaxation times in an electric field are detected in the ferroelectric TMA-ZnCl[sub 4] at uniaxial pressures in the range where a transition arises to a nonuniform state...

  • Polarization-graded ferroelectrics: Transpacitor energy gain. Mantese, Joseph V.; Schubring, Norman W.; Micheli, Adolph L. // Applied Physics Letters;12/10/2001, Vol. 79 Issue 24, p4007 

    The energy gain of polarization-graded ferroelectric devices, configured as active transcapacitive elements, have been measured. Gain factors in excess of 1000 were obtained for small signal, static inputs; yielding charge gain amplifiers with gain factors of ∼150, remarkably similar to...

  • Suppression of ferroelectric polarization by an adjustable depolarization field. Black, C.T.; Farrell, Curtis // Applied Physics Letters;10/6/1997, Vol. 71 Issue 14, p2041 

    Investigates the effect of a depolarizing field on the properties of a ferroelectric capacitor. Factors influencing the control of field strength inside the ferroelectric; Effects of an uncompensated polarization charge; Impact of a depolarizing field on ferroelectric device applications.

  • Long-range coupling interactions in ferroelectric sandwich structures. Shen, Jian; Ma, Yu-qiang // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p5031 

    We study the ferroelectric system consisting of the sandwich structure (PbTiO[sub 3]/BaTiO[sub 3]/PbTiO[sub 3]) by using the Ginzburg-Landau phenomenological theory, and emphasize the importance of the long-range coupling interaction to the ferroelectric behavior of the system. We find that...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics