Spin injection studies into GaAs quantum wells in the presence of confined electrons

Yasar, M.; Mallory, R.; Petrou, A.; Hanbicki, A. T.; Kioseoglou, G.; Li, C. H.; van't Erve, O. M. J.; Jonker, B. T.
January 2009
Applied Physics Letters;1/19/2009, Vol. 94 Issue 3, pN.PAG
Academic Journal
We compare the electroluminescence spectra (spectral composition and polarization characteristics) of two types of Fe-based AlGaAs/GaAs n-i-p spin light emitting diodes (spin LEDs). In type A spin LEDs the GaAs quantum well (QW) does not contain any confined carriers, while in type B LEDs the GaAs QW is occupied by confined electrons generated by excess n-type doping in the AlGaAs(n) barrier. Type B LEDs show a significantly smaller circular polarization at the e1h1 feature than type A devices. Other differences include the presence of the e1â„“1 exciton as well as excitonic phonon replicas in type B LEDs. Possible mechanisms for these differences are discussed.


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