TITLE

Spin injection studies into GaAs quantum wells in the presence of confined electrons

AUTHOR(S)
Yasar, M.; Mallory, R.; Petrou, A.; Hanbicki, A. T.; Kioseoglou, G.; Li, C. H.; van't Erve, O. M. J.; Jonker, B. T.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/19/2009, Vol. 94 Issue 3, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We compare the electroluminescence spectra (spectral composition and polarization characteristics) of two types of Fe-based AlGaAs/GaAs n-i-p spin light emitting diodes (spin LEDs). In type A spin LEDs the GaAs quantum well (QW) does not contain any confined carriers, while in type B LEDs the GaAs QW is occupied by confined electrons generated by excess n-type doping in the AlGaAs(n) barrier. Type B LEDs show a significantly smaller circular polarization at the e1h1 feature than type A devices. Other differences include the presence of the e1â„“1 exciton as well as excitonic phonon replicas in type B LEDs. Possible mechanisms for these differences are discussed.
ACCESSION #
36339284

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics