Memory effects in photoinduced femtosecond magnetization rotation in ferromagnetic GaMnAs

Wang, J.; Cotoros, I.; Chemla, D. S.; Liu, X.; Furdyna, J. K.; Chovan, J.; Perakis, I. E.
January 2009
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
Academic Journal
We report a photoinduced femtosecond change in the magnetization direction in the ferromagnetic semiconductor GaMnAs, which allows for the detection of a four-state magnetic memory on the femtosecond time scale. The temporal profile of the magnetization exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a carrier-mediated nonthermal regime within the first 200 fs to a thermal, lattice-heating picosecond regime.


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