Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal

Truong, T. A.; Campos, L. M.; Matioli, E.; Meinel, I.; Hawker, C. J.; Weisbuch, C.; Petroff, P. M.
January 2009
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
Academic Journal
A noninvasive fabrication process involving soft nanoimprint lithography is used to pattern a photonic crystal (PhC) in titania film for enhanced light extraction from a GaN light emitting diode (LED). This technique avoids damaging the LED structure by the etching process, while photoluminescence measurements show extracted modes emitted from the quantum wells which agree well with modeling. A light extraction improvement of 1.8 times is measured using this noninvasive PhC.


Related Articles

  • Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers. Wang, Y. J.; Xu, S. J.; Li, Q.; Zhao, D. G.; Yang, H. // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p041903 

    The optical properties of two kinds of InGaN/GaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly...

  • Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells. Perlin, Piotr; Iota, Valentin // Applied Physics Letters;6/2/1997, Vol. 70 Issue 22, p2993 

    Examines the influence of pressure on photoluminescence and electroluminescence in gallium nitride/indium gallium nitride/aluminum gallium nitride quantum wells. Use of high-brightness single-quantum-well light emitting diodes; Discovery of pressure shift on primary luminescence peak of each...

  • Recombination dynamics in InGaN quantum wells. Jeon, E. S.; Kozlov, V.; Song, Y.-K.; Vertikov, A.; Kuball, M.; Nurmikko, A. V.; Liu, H.; Chen, C.; Kern, R. S.; Kuo, C. P.; Craford, M. G. // Applied Physics Letters;12/30/1996, Vol. 69 Issue 27, p4194 

    Transient photoluminescence measurements are reported on a thin InGaN single quantum well, encompassing the high injection regime. The radiative processes that dominate the recombination dynamics, especially at low temperatures, show the impact of localized electronic states that are distributed...

  • Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions. Sung-Nam Lee; Paek, H. S.; Kim, H.; Jang, T.; Park, Y. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p081107 

    We demonstrated a monolithic white light-emitting diodes (LEDs) epitaxial structure with blue, green, and amber emissions by introducing the blue InGaN/GaN five quantum wells (QWs) and InGaN/GaN single quantum well (SQW) with In-phase separated green/amber emissions as an active layer. Three...

  • Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material. Ryu, Han-Youl; Shin, Dong-Soo; Shim, Jong-In // Applied Physics Letters;3/26/2012, Vol. 100 Issue 13, p131109 

    In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier localization in In-rich region and inhomogeneous carrier distribution. The authors investigate the efficiency droop of InGaN-based light-emitting diodes (LEDs) based on the carrier rate equation including...

  • Stable Bending Performance of Flexible Organic Light-Emitting Diodes Using IZO Anodes. Kiyeol Kwak; Kyoungah Cho; Sangsig Kim // Scientific Reports;9/27/2013, p1 

    We report luminescent characteristics and mechanical stability of a flexible organic light-emitting diode (FOLED) using an amorphous ZnO-doped In2O3 (a-IZO) anode with a low sheet resistance of 18.9 Ω/◻ and a high optical transparency of 86%. The FOLED consisting of...

  • Exciton quenching in poly(phenylene vinylene) polymer light-emitting diodes. Markov, D. E.; Blom, P. W. M. // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p233511 

    The quenching of excitons at the metallic cathode of a polymer light-emitting diode (PLED) has been investigated by time-resolved photoluminescence. The decay of the luminescence is analyzed including both nonradiative energy transfer to the metallic cathode and exciton diffusion. Incorporation...

  • Microcavity two-unit tandem organic light-emitting devices having a high efficiency. Ting-Yi Cho; Chun-Liang Lin; Chung-Chih Wu // Applied Physics Letters;3/13/2006, Vol. 88 Issue 11, p111106 

    In pursuit of further enhancement in luminance and efficiency of organic light-emitting devices (OLEDs), it is worth exploring what benefits could be obtained by combining two luminance-enhancement techniques, i.e., microcavity and tandem OLEDs. In this letter, we have investigated theoretically...

  • Thermally stable luminescence of blue LiSrPO4:Eu2+ phosphor for near-UV light-emitting diodes. Liu, J.; Wu, Z.; Gong, M. // Applied Physics B: Lasers & Optics;Nov2008, Vol. 93 Issue 2/3, p583 

    Blue phosphor, LiSrPO4:Eu2+, was prepared by solid-state reaction method under a weak reductive atmosphere and investigated by means of photoluminescence, concentration quenching process, and temperature dependence of luminescence. These results show that LiSrPO4:Eu2+ can be efficiently excited...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics