TITLE

B profile alteration by annealing in reactive ambients

AUTHOR(S)
Pawlak, B. J.; Cowern, N. E. B.; Vandervorst, W.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Suppression or stimulation of B diffusion and activation in Si (coimplanted with F) has been investigated by anneals in a N2 ambient enriched with H2 or O2. The H2 rich ambient leads to B desorption and therefore stimulated diffusion toward the surface, thus effectively reducing indiffusion. Annealing in an O2 rich ambient promotes deeper B diffusion by injection of Si interstitials. The impact of these ambients can further be modulated by combining the B implant with a shallow or deep F coimplant acting as Si interstitial trap. Deep F coimplant and H2 rich ambient offer attractive B diffusion and activation.
ACCESSION #
36258510

 

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