Infrared detectors based on InGaAsN/GaAs intersubband transitions

Duboz, Jean-Yves; Hugues, Maxime; Damilano, Benjamin; Nedelcu, Alexandru; Bois, Philippe; Kheirodin, Nasrin; Julien, François H.
January 2009
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
Academic Journal
InGaAsN/GaAs multiquantum well structures have been grown by molecular beam epitaxy with 1% nitrogen in the well. Intersubband transitions have been observed in the infrared region by transmission spectroscopy. Infrared detectors have been processed and an intersubband transition has been observed in the photocurrent spectrum. All the observations are consistent with each other and in very good agreement with a theoretical calculation. Band to band transitions observed by photoluminescence also confirm the position of the levels in the well.


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