TITLE

Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P

AUTHOR(S)
Chen, An; Woodall, Jerry M.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Wide-bandgap semiconductor AlxGa1-xP is a promising material candidate for low-noise photodiodes in blue/UV spectrum. Photodiodes were fabricated on Al0.5Ga0.5P epitaxial layer grown lattice matched on GaP substrate by molecular beam epitaxy. Although quantum efficiency is low for standard p-i-n photodiode due to inadvertent photon absorption in the top p-layer, it can be significantly improved by opening a recessed window in the top p-layer or by using a Schottky junction photodiode structure. Al0.5Ga0.5P band alignment parameters can be extrapolated from the current-voltage characteristics of Al0.5Ga0.5P Schottky junctions. The bandgap of Al0.5Ga0.5P was measured to be 2.38 eV.
ACCESSION #
36258502

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics