TITLE

Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study

AUTHOR(S)
Umezawa, Naoto
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reducing the number of charged defects in the gate insulating oxides is an essential task to improve the electrical properties of field-effect transistors. Our comprehensive study using first-principles calculations revealed that incorporating Ba atoms into HfO2 can markedly decrease the number of positive charges associated with oxygen vacancies (VO). This is attributed to the strong coupling of a Ba atom substituted for Hf (BaHf) with VO, rendering the complex defect BaHfVO stable in the charge-neutral state.
ACCESSION #
36258493

 

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