TITLE

Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures

AUTHOR(S)
Liang, Qi; Chin, Cheng Yi; Lai, Joseph; Yan, Chih-shiue; Meng, Yufei; Mao, Ho-kwang; Hemley, Russell J.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Single crystals of diamond up to 18 mm in thickness have been grown by microwave plasma assisted chemical vapor deposition at gas pressures of up to 350 torr. Growth rates of up to 165 μm/h at 300 torr at high power density have been achieved. The processes were evaluated by optical emission spectroscopy. The high-quality single-crystal diamond grown at optimized conditions was characterized by UV-visible absorption and photoluminescence spectroscopy. The measurements reveal a direct relationship between residual absorption and nitrogen content in the gas chemistry. Fabrication of high quality single-crystal diamond at higher growth rates should be possible with improved reactor design that allows still higher gas synthesis pressures.
ACCESSION #
36258484

 

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