Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures

Liang, Qi; Chin, Cheng Yi; Lai, Joseph; Yan, Chih-shiue; Meng, Yufei; Mao, Ho-kwang; Hemley, Russell J.
January 2009
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
Academic Journal
Single crystals of diamond up to 18 mm in thickness have been grown by microwave plasma assisted chemical vapor deposition at gas pressures of up to 350 torr. Growth rates of up to 165 μm/h at 300 torr at high power density have been achieved. The processes were evaluated by optical emission spectroscopy. The high-quality single-crystal diamond grown at optimized conditions was characterized by UV-visible absorption and photoluminescence spectroscopy. The measurements reveal a direct relationship between residual absorption and nitrogen content in the gas chemistry. Fabrication of high quality single-crystal diamond at higher growth rates should be possible with improved reactor design that allows still higher gas synthesis pressures.


Related Articles

  • Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits. Weyher, J. L.; Ashraf, H.; Hageman, P. R. // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p031913 

    GaN templates grown by the metal organic chemical vapor deposition method were etched in a defect-selective molten salts eutectic and were subsequently overgrown by a GaN layer using the hydride vapor phase epitaxy (HVPE) method. Optimized conditions of etching and of HVPE growth processes...

  • Chemical vapor deposition and photoluminescent properties of polycrystalline AlN films. Red’kin, A.; Gruzintsev, A.; Makovei, Z.; Tatsii, V.; Yakimov, E. // Inorganic Materials;Jun2006, Vol. 42 Issue 6, p627 

    Thick polycrystalline aluminum nitride films have been grown by chemical vapor deposition using metallic aluminum and ammonium chloride. The films have been characterized by scanning electron microscopy and photoluminescence spectroscopy. The results have been used to analyze correlations...

  • Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN. Gaubas, E.; Ceponis, T.; Jasiunas, A.; Kovalevskij, V.; Meskauskaite, D.; Pavlov, J.; Remeikis, V.; Tekorius, A.; Vaitkus, J. // Applied Physics Letters;2/10/2014, Vol. 104 Issue 6, p062104-1 

    In order to evaluate carrier densities created by 1.6MeV protons and to trace radiation damage of the 2.5 μm thick GaN epi-layers grown by metalorganic chemical vapor deposition technique, a correlation between the photoconductivity transients and the steady-state photoluminescence spectra...

  • Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition. Chen, Z. T.; Sakai, Y.; Egawa, T. // Applied Physics Letters;5/10/2010, Vol. 96 Issue 19, p191911 

    Temperature-dependent photoluminescence (PL) measurements have been performed on high-quality InAlN layers lattice-matched (LM) to GaN with different thicknesses. It is found that the PL is consisted of two components denoted as IH (high-energy side) and IL (low-energy side), respectively. IH is...

  • Room-temperature photoluminescence from nitrogenated carbon nanotips grown by plasma-enhanced hot filament chemical vapor deposition. Wang, B. B.; Cheng, Q. J.; Chen, Y. A.; Ostrikov, K. // Journal of Applied Physics;Sep2011, Vol. 110 Issue 5, p054323 

    Nitrogenated carbon nanotips with a low atomic concentration of nitrogen have been synthesized by using a custom-designed plasma-enhanced hot-filament plasma chemical vapor deposition system. The properties (including morphology, structure, composition, photoluminescence, etc.) of the...

  • Promoting secondary nucleation using methane modulations during diamond chemical vapor deposition to produce smoother, harder, and better quality films. Ali, N.; Neto, V. F.; Gracio, J. // Journal of Materials Research;Feb2003, Vol. 18 Issue 2, p296 

    Focuses on a study which reported the results of a comparative study relating to the deposition of diamond films using both the hot-filament and microwave plasma chemical vapor deposition systems. Experimental procedures; Results and discussion; Conclusions.

  • Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition. Kim, Y.; Song, W.; Lee, S. Y.; Jeon, C.; Jung, W.; Kim, M.; Park, C.-Y. // Applied Physics Letters;6/27/2011, Vol. 98 Issue 26, p263106 

    Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was...

  • Optical properties of nanocrystalline diamond thin films. Achatz, P.; Garrido, J. A.; Stutzmann, M.; Williams, O. A.; Gruen, D. M.; Kromka, A.; Steinmüller, D. // Applied Physics Letters;3/6/2006, Vol. 88 Issue 10, p101908 

    The optical properties of nanocrystalline diamond films grown from a hydrogen-rich CH4/H2 gas phase by hot filament chemical vapor deposition, as well as from an argon-rich Ar/CH4 gas phase by microwave plasma enhanced chemical vapor deposition, are reported. The influence of nitrogen...

  • Fuel gas production by microwave plasma in liquid. Nomura, Shinfuku; Toyota, Hiromichi; Tawara, Michinaga; Yamashita, Hiroshi; Matsumoto, Kenya // Applied Physics Letters;6/5/2006, Vol. 88 Issue 23, p231502 

    We propose to apply plasma in liquid to replace gas-phase plasma because we expect much higher reaction rates for the chemical deposition of plasma in liquid than for chemical vapor deposition. A reactor for producing microwave plasma in a liquid could produce plasma in hydrocarbon liquids and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics