X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

Deng, R.; Yao, B.; Li, Y. F.; Zhao, Y. M.; Li, B. H.; Shan, C. X.; Zhang, Z. Z.; Zhao, D. X.; Zhang, J. Y.; Shen, D. Z.; Fan, X. W.
January 2009
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
Academic Journal
Valence-band offset (VBO) of n-ZnO/p-NiO heterojunction has been investigated by x-ray photoelectron spectroscopy. Core levels of Zn 2p and Ni 2p were used to align the VBO of n-ZnO/p-NiO heterojunction. It was found that n-ZnO/p-NiO heterojunction has a type-II band alignment and its VBO is determined to be 2.60±0.20 eV, and conduction-band offset is deduced to be 2.93±0.20 eV. The experimental VBO value is in good agreement with the calculated value based on the electron affinity of ZnO and NiO.


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