TITLE

GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature

AUTHOR(S)
Rodriguez, J. B.; Cerutti, L.; Tournié, E.
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a Sb-based type-I laser grown on GaAs substrate, emitting continuous wave at room temperature around 2.2 μm. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum wells embedded in AlGaAsSb barriers. Despite the large lattice mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50 °C with threshold current densities in the range of 1.5–2.2 kA/cm2. An optical output power of 3.7 mW was obtained at 20 °C.
ACCESSION #
36258464

 

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