Optical bandgap widening of p-type Cu2O films by nitrogen doping

Nakano, Yoshitaka; Saeki, Shu; Morikawa, Takeshi
January 2009
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
Academic Journal
We have investigated the effect of N doping into Cu2O films deposited by reactive magnetron sputtering. With increasing N-doping concentration up to 3%, the optical bandgap energy is enlarged from ∼2.1 to ∼2.5 eV with retaining p-type conductivity as determined by optical absorption and Hall effect measurements. Additionally, photoelectron spectroscopy in air measurements shows an increase in the valence and conduction band shifts with N doping. These experimental results demonstrate possible optical bandgap widening of p-type N-doped Cu2O films, which is a phenomenon that is probably associated with significant structural changes induced by N doping, as suggested from x-ray diffraction measurements.


Related Articles

  • Ag–N dual-accept doping for the fabrication of p-type ZnO. Bin, Wang; Yue, Zhao; Jiahua, Min; Wenbin, Sang // Applied Physics A: Materials Science & Processing;Mar2009, Vol. 94 Issue 4, p715 

    P-type ZnO was realized by dual-doping with nitrogen and silver via electrostatic-enhanced ultrasonic spray pyrolysis. The structural, electrical, and optical properties were explored by XRD, Hall-effect, and optical transmission spectra. The resistivity of ZnO:(N,Ag) film was found to be 56...

  • Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis. Y. Lin; Arehart, A. R.; Carlin, A. M.; Ringel, S. A. // Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p062109 

    Electron transport in low dislocation density, strain-relaxed InAs layers grown on metamorphic InAsyP1-y/InP substrates by molecular beam epitaxy was characterized using quantitative mobility spectrum analysis (QMSA) of Hall effect measurements. QMSA applied to systematically varied metamorphic...

  • Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study. Bevilacqua, Mose; Tumilty, Niall; Mitra, Chiranjib; Ye, Haitao; Feygelson, Tatayana; Butler, James E.; Jackman, Richard B. // Journal of Applied Physics;Feb2010, Vol. 107 Issue 3, p033716 

    Nanocrystalline diamond (NCD) has been grown using a nanodiamond seeding technique, leading to a dense form of this material, with grain sizes around 100 nm. The electrical properties of both intrinsic and lightly boron-doped NCD have been investigated using impedance spectroscopy and Hall...

  • An approach to enhanced acceptor concentration in ZnO:N films. Li, L.; Shan, C. X.; Li, B. H.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.; Lu, Y. M. // Journal of Materials Science;Aug2010, Vol. 45 Issue 15, p4093 

    Owing to the low doping concentration of nitrogen and strong compensation of intrinsic donors, the attainment of highly conductive p-type ZnO films remains one of the largest challenges for the application of ZnO. An approach has been proposed to increase the doping concentration of nitrogen in...

  • Structural study of nitrogen-doping effects in bamboo-shaped multiwalled carbon nanotubes. Jae Won Jang; Cheol Eui Lee; Seung Chul Lyu, Kanti; Tae Jae Lee; Cheol Jin Lee // Applied Physics Letters;4/12/2004, Vol. 84 Issue 15, p2877 

    We have investigated nitrogen doping effects on the structure and crystallinity of bamboo-shaped multiwalled carbon nanotubes (BS-MWNTs) by means of x-ray photoemission spectroscopy (XPS) and transmission electron microscopy. By controlling the NH3/C2H2 flow ratio during the chemical vapor...

  • The 3838 Ã… photoluminescence line in 4H-SiC. Henry, A.; Forsberg, U.; Janson, M. S.; Janzén, E. // Journal of Applied Physics;9/1/2003, Vol. 94 Issue 5, p2901 

    We report the results of a study of the origins of the peak near 3838 Ã… observed in the photoluminescence (PL) spectrum of 4H-SiC. For n[sup +]-doped 4H-SiC material, it appears as a broad peak that is shown to be related to high-level nitrogen doping, with an energy position depending on...

  • Graphical method to include temperature variation of activation energy in Hall data analysis. Iyer, Suman B.; Kumar, Vikram // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5529 

    Describes a graphical method for Hall data analysis. Dominant contribution to the impurity energy level for intermediate doping; Method used to study the reliability of the doping densities.

  • Titanium-doped indium oxide films prepared by d.c. magnetron sputtering using ceramic target. Abe, Yoshiyuki; Ishiyama, Noriko // Journal of Materials Science;Nov2006, Vol. 41 Issue 22, p7580 

    Polycrystalline thin films of Ti-doped indium oxide (indium–titanium-oxide, ITiO) were prepared by d.c. magnetron sputtering and their electrical and optical properties were investigated. Doping of Ti was effective in improvement of the electroconductivity of the indium oxide: the...

  • Incorporation of nitrogen in Cr/Sc multilayers giving improved soft x-ray reflectivity. Ghafoor, Naureen; Eriksson, Fredrik; Gullikson, Eric; Hultman, Lars; Birch, Jens // Applied Physics Letters;3/3/2008, Vol. 92 Issue 9, p091913 

    Soft x-ray reflectivity (SXR) of Cr/Sc multilayer with bilayer thickness of Λ=1.56 nm was increased by 100% by an intentional introduction of nitrogen during magnetron sputtering. Multilayers deposited at background pressures of ≤2×10-6 Torr exhibited amorphous layers with flat...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics