TITLE

Specific resistance of Pd/Ir interfaces

AUTHOR(S)
Acharyya, R.; Nguyen, H. Y. T.; Loloee, R.; Pratt, W. P.; Bass, J.; Wang, Shuai; Xia, Ke
PUB. DATE
January 2009
SOURCE
Applied Physics Letters;1/12/2009, Vol. 94 Issue 2, pN.PAG
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
From measurements of the current-perpendicular-to-plane total specific resistance (AR=area times resistance) of sputtered Pd/Ir multilayers, we derive the interface specific resistance, 2ARPd/Ir=1.02±0.06 fΩ m2, for this metal pair with closely similar lattice parameters. Assuming a single fcc crystal structure with the average lattice parameter, no-free-parameter calculations (including only spd orbitals) give for perfect interfaces 2ARPd/Ir (perf)=1.21±0.1 fΩ m2, and for interfaces composed of 2 ML of a random 50%-50% alloy 2ARPd/Ir (50/50)=1.22±0.1 fΩ m2. Within mutual uncertainties, these values fall just outside the range of the experimental value. Updating to add f-orbitals gives 2ARPd/Ir (perf)=1.10±0.1 fΩ m2 and 2ARPd/Ir (50-50)=1.13±0.1 fΩ m2, values now compatible with the experimental one. We also update, with f-orbitals, calculations for other pairs.
ACCESSION #
36258431

 

Related Articles

  • Analysis of initial stage of Pd-Si (111) and Au-Si (111) interface reactions by means of high-resolution proton energy-loss spectroscopy. Kanasaki, Jun-ichi; Itoh, Noriaki; Matsunami, Noriaki // Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1072 

    High-resolution spectroscopy of protons incident under nonchanneling condition and scattered by 12° on Pd- and Au-deposited Si(111) surfaces has been employed for direct layer-by-layer analysis of the depth distribution of Au and Pd. For nearly monolayer deposition at room temperature, most...

  • Study of interface resistances in epitaxial.... Char, K.; Antognazza, L.; Geballe, T.H. // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2420 

    Examines the interface resistance in superconductor-normal-superconductor junctions. Use of CaRuO[sub 7-x] and La[sub 1.4]Sr[sub 0.6]CuO[sub 4]; Cause of the oxygen disorder at the YBa[sub 2]Cu[sub 3]O[sub 7-x] surface; Importance of understanding the origin of interface resistance.

  • Manipulating current-induced magnetization switching (invited). Urazhdin, S.; Kurt, H.; AlHajDarwish, M.; Birge, Norman O.; Pratt, W. P.; Bass, J. // Journal of Applied Physics;5/15/2005, Vol. 97 Issue 10, p10Q702 

    We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the nonmagnetic spacers, the relative orientations of the magnetic layers, and the spin-dependent...

  • An influence of bottom electrode material on electrical conduction and resistance switching of TiOx thin films. Pham, Kim Ngoc; Nguyen, Trung Do; Ta, Thi Kieu Hanh; Thuy, Khanh Linh Dao; Le, Van Hieu; Pham, Duy Phong; Tran, Cao Vinh; Mott, Derrick; Maenosono, Shinya; Kim, Sang Sub; Lee, Jaichan; Pham, Duc Thang; Phan, Bach Thang // European Physical Journal - Applied Physics;Dec2013, Vol. 64 Issue 3, p00 

    We investigated the electrical conduction and resistance switching mechanisms of TiOx thin films grown on three kinds of bottom electrode at room temperature (an inert Pt, an active Ti and fluorine tin oxide FTO electrodes). The bottom electrode materials strongly affect the I-V characteristics...

  • Tunneling magnetoresistance: The relevance of disorder at the interface. Wimmer, Michael; Richter, Klaus // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1375 

    The effect of disorder on the tunneling magnetoresistance (TMR) of a semiconductor tunnel barrier is investigated using a single-band model including elastic scattering. We find that disorder can decrease the TMR ratio significantly. Furthermore, we show that impurities close to the barrier...

  • Conceptual material design for magnetic tunneling junction cap layer for high magnetoresistance ratio. Nagamine, M.; Nagase, T.; Nishiyama, K.; Yoshikawa, M.; Amano, M.; Asao, Y.; Ikegawa, S.; Yoda, H.; Honjo, H.; Mori, K.; Ishiwata, N.; Tahara, S. // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08K703 

    A conceptual material design for magnetic tunneling junction cap layer realizing a steep NiFe/AlOx interface is proposed. Tunnel magneto resistance stack of cap/NiFe/AlOx/CoFe/Ru/CoFe/PtMn/Ta//sub was prepared. Maximum magnetoresistance (MR) ratios of nonmagnetic-NiFeZr, Zr, Ta, Ru, and Rh caps...

  • Peltier cooling in current-perpendicular-to-plane metallic junctions. Fukushima, Akio; Kubota, Hitoshi; Yamamoto, Atsushi; Suzuki, Yoshishige; Yuasa, Shinji // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08H706 

    Peltier cooling in submicron-sized current-perpendicular-to-plane metallic junctions (CPP-MJs) and enhancement of the Peltier coefficients are reported. The main goal of this study was to measure the temperature dependence of the Peltier coefficient. We fabricated submicron-sized CPP-MJs with...

  • The effect of annealing temperature on electrical properties of Pd/n-GaSb Schottky contacts. Su, Y. K.; Li, N. Y.; Juang, F. S.; Wu, S. C. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p646 

    Presents information on a study which analyzed the thermal stability for palladium (Pd)/n-GaSb Schottky contacts. Fabrication of Schottky diodes; Analysis of the interface transition between Pd and GaSb using Rutherford backscattering spectroscopy; Information on the current-voltage...

  • Influence of interface alloying on the magnetic properties of Co/Pd multilayers. Carrey, J.; Berkowitz, A.E.; Egelhoff Jr., W.F.; Smith, David J. // Applied Physics Letters;12/22/2003, Vol. 83 Issue 25, p5259 

    The origin of perpendicular anisotropy in Co/Pd multilayers has been investigated. We examined this question by studying multilayers in which the total equivalent thicknesses of Co and Pd are kept constant, but in which the Co/Pd interface is progressively alloyed using codeposition of the two...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics