Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape

Wantae Lim; Douglas, E. A.; Kim, S.-H.; Norton, D. P.; Pearton, S. J.; Ren, F.; Shen, H.; Chang, W. H.
December 2008
Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p252103
Academic Journal
Amorphous (α-)InGaZnO4 thin film transistors (TFTs) were fabricated on polyimide clean-room tape at low temperature (<100 °C). The α-InGaZnO4 films with an n-type carrier concentration of ∼1016 cm-3 were deposited by rf-magnetron sputtering in a mixed ambient of Ar/O2. The bottom-gate-type TFTs showed good saturation mobility (∼5.3 cm2 V-1 s-1), drain current on-to-off ratio of approximately 105, threshold voltage of 1.1 V, and subthreshold gate-voltage swing of 0.55 V decade-1. These results were comparable to those of the same oxide TFTs that we have fabricated on either glass or polyethylene terephthalate substrates. The results demonstrate that even polyimide clean-room tape can be an appropriate substrate for inexpensive-flexible-adhesive-transparent electronic devices.


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