Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate

Qiuxia Xu; Gaobo Xu; Wenwu Wang; Dapeng Chen; Shali Shi; Zhengsheng Han; Tianchun Ye
December 2008
Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p252903
Academic Journal
We have fabricated the thinnest equivalent oxide thickness of 0.62 nm HfLaON gate dielectric for TaN/HfLaON/SiOx gate stack with improved thermal stability and electrical characteristics. The HfLaON film was deposited using reactive sputtering of Hf–La and Hf targets by alternate means in N2/Ar ambience. The effects of different postdeposition annealing conditions and various La contents on the properties of HfLaON film and its interface have been investigated; the corresponding mechanisms are discussed. The gate tunneling leakage is five orders of magnitude lower than the normal polycrystalline silicon/SiO2 structure. The effective work function with TaN metal gate is 4.06 eV.


Related Articles

  • Mechanism for Ohmic contact formation of Ti on n-type GaN investigated using synchrotron radiation photoemission spectroscopy. Kim, Jong Kyu; Jang, Ho Won; Lee, Jong-Lam // Journal of Applied Physics;6/1/2002, Vol. 91 Issue 11, p9214 

    Changes of the work function of contact metal and the atomic composition at the vicinity of metal/GaN interface were studied in in situ annealed Ti on n-type GaN using synchrotron radiation photoemission spectroscopy. Ti layer transformed to TiN and its work function increased as annealing...

  • WxN1-x alloys as diffusion barriers between Al and Si. So, F. C. T.; Kolawa, E.; Zhao, X.-A.; Pan, E. T-S.; Nicolet, M.-A. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2787 

    Presents a study that investigated reactively sputtered tungsten nitride layers as diffusion barriers between aluminum overlayers and silicon shallow n[sup+]-p junctions. Roles of tungsten-based barrier materials in contact metallurgy; Percentage of diode failures as a function of annealing...

  • Effect of Annealing on the Interfacial and Structural Properties of Amorphous Silicon-Hafnia Films. Kohli, Sandeep; McCurdy, Patrick; Rithner, Christopher; Dorhout, Peter; Dummer, Ann; Menoni, Carmen // Metallurgical & Materials Transactions. Part A;Jan2011, Vol. 42 Issue 1, p71 

    Chemical and physical properties of the interface formed between amorphous silicon ( a-Si) and hafnium oxide (HfO) were investigated using X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS). XRR showed that the interface layer formed between the a-Si and HfO layer had a...

  • Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition. Baldovino, S.; Spiga, S.; Scarel, G.; Fanciulli, M. // Applied Physics Letters;10/22/2007, Vol. 91 Issue 17, p172905 

    The interface between (100)Si and HfO2 grown by atomic layer deposition is strongly influenced by the choice of the oxygen precursor. In particular, the use of oxidants with different oxidizing power such as H2O and O3 produces interfaces differing both in terms of density of electronic traps...

  • Effect of low-temperature preannealing on laser-annealed p[sup +]/n ultrashallow junctions. Baek, Sungkweon; Jang, Taesung; Hwang, Hyunsang // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2272 

    The effect of low-temperature preannealing on ultrashallow p[sup +]/n junctions was examined. An ultrashallow junction was formed by means of B[sub 2]H[sub 6] plasma doping at an energy of 500 V. The junction was activated by low-temperature (300-500 °C) annealing, followed by laser...

  • Ce/GaN(0001) interfacial formation and electronic properties. Xiao, Wende; Guo, Qinlin; Wang, E. G. // Journal of Applied Physics;2/1/2004, Vol. 95 Issue 3, p943 

    X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy electron diffraction have been used to study the growth, interfacial reaction, and Fermi level movement of Ce on a n-type GaN(0001)-(1×1) surface. The results demonstrate that Ce grows in a...

  • Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy. Bell, L. D.; Bell, L.D.; Smith, R. P.; Smith, R.P.; McDermott, B. T.; McDermott, B.T.; Gertner, E. R.; Gertner, E.R.; Pittman, R.; Pierson, R. L.; Pierson, R.L.; Sullivan, G. J.; Sullivan, G.J. // Applied Physics Letters;3/27/2000, Vol. 76 Issue 13 

    Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces. The effects of in situ and ex situ annealing on the starting GaN surface were examined, with the aim of increasing the surprisingly low value of interface electron...

  • Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition. Gang Ye; Hong Wang; Serene Lay Geok Ng; Rong Ji; Arulkumaran, Subramaniam; Geok Ing Ng; Yang Li; Zhi Hong Liu; Kian Siong Ang // Applied Physics Letters;10/13/2014, Vol. 105 Issue 15, p1 

    Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaOx layer of ZrO2 grown by atomic layer deposition (ALD) on GaN is studied. ZrO2 films were annealed in N2 atmospheres in temperature range of 300°C to 700°C and analyzed...

  • Work function engineering using lanthanum oxide interfacial layers. Alshareef, H. N.; Quevedo-Lopez, M.; Wen, H. C.; Harris, R.; Kirsch, P.; Majhi, P.; Lee, B. H.; Jammy, R.; Lichtenwalner, D. J.; Jur, J. S.; Kingon, A. I. // Applied Physics Letters;12/4/2006, Vol. 89 Issue 23, p232103 

    A La2O3 capping scheme has been developed to obtain n-type band-edge metal gates on Hf-based gate dielectrics. The viability of the technique is demonstrated using multiple metal gates that normally show midgap work function when deposited directly on HfSiO. The technique involves depositing a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics