TITLE

Study on characteristics of thermally stable HfLaON gate dielectric with TaN metal gate

AUTHOR(S)
Qiuxia Xu; Gaobo Xu; Wenwu Wang; Dapeng Chen; Shali Shi; Zhengsheng Han; Tianchun Ye
PUB. DATE
December 2008
SOURCE
Applied Physics Letters;12/22/2008, Vol. 93 Issue 25, p252903
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have fabricated the thinnest equivalent oxide thickness of 0.62 nm HfLaON gate dielectric for TaN/HfLaON/SiOx gate stack with improved thermal stability and electrical characteristics. The HfLaON film was deposited using reactive sputtering of Hf–La and Hf targets by alternate means in N2/Ar ambience. The effects of different postdeposition annealing conditions and various La contents on the properties of HfLaON film and its interface have been investigated; the corresponding mechanisms are discussed. The gate tunneling leakage is five orders of magnitude lower than the normal polycrystalline silicon/SiO2 structure. The effective work function with TaN metal gate is 4.06 eV.
ACCESSION #
36197997

 

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